Product introduction：
Are you designing a high-power-density industrial power supply or new energy inverter that needs to withstand 650V high voltage while also ensuring a 20A high current output? Ordinary high-voltage MOSFETs either have high on-resistance causing severe heating, or switching losses drag down system efficiency. The VBsemi SIHH14N65E-T1-GE3-VB is designed for this—based on advanced super-junction multi-epitaxial layer technology (SJ_Multi-EPI), it integrates 650V withstand voltage, 20A current capability, and an on-resistance of only 160mΩ into the DFN8X8 package, allowing high-voltage, high-current designs to no longer compromise.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
|
160(mΩ) |
SJ_Multi-EPI |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8X8 |
Single-N |
|
|
|
|
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8X8 |
Single-N |
650V |
|
3.5V |
20A |
|
SJ_Multi-EPI |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8X8 |
Single-N |
|
|
|
|
|
|
|
- Drain-Source Voltage (VDS): 650V, provides ample safety margin for high-voltage applications.
- Gate-Source Voltage (VGS): ±30V, compatible with various drive solutions.
- Threshold Voltage (Vth): 3.5V, clear switching characteristics, strong anti-interference capability.
- On-Resistance (RDS(on)): 160mΩ (at VGS=10V), losses remain manageable at high voltage.
- Maximum Continuous Drain Current (ID): 20A, DFN8X8 package balances heat dissipation and power density.
- Technology: Super Junction Multi-Epitaxial, optimizing the balance between on-resistance and switching performance.
Domain and module applications：
- **Switching Power Supplies / LLC Resonant Power Supplies** – As a high-voltage main switch, utilizing low on-resistance to reduce conduction loss and improve overall system efficiency.
- **Photovoltaic Inverters / Energy Storage Systems** – Undertaking power conversion tasks on the high-voltage side of the DC bus, withstanding bus voltage fluctuations, reliable and efficient.
- **Electric Vehicle Charging Stations / OBC** – 650V withstand voltage combined with 20A current capability, meeting the high-voltage switching requirements of auxiliary power supplies and DC-DC stages.
- **Industrial Motor Drives / Variable Frequency Drives** – Achieving fast, low-loss power switching in high-voltage buses, improving motor control performance.
- **Uninterruptible Power Supplies (UPS)** – Used for inverter stage power output, ensuring stable power supply during load transients, reducing system temperature rise.
- **High-Voltage DC-DC Converters** – Replacing traditional high-voltage MOSFETs, improving conversion efficiency with lower on-resistance and excellent thermal performance.
**One-Sentence Summary:** The SIHH14N65E-T1-GE3-VB is not an ordinary high-voltage MOSFET; it is your "efficiency cornerstone" and "reliable choice" for high-voltage, high-current power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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