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TK20J60W,S1VE-VB Product details
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The VBsemi TK20J60W,S1VE-VB is a Single N-channel field-effect transistor manufactured using SJ_Multi-EPI (superjunction multi-layer epitaxial) technology, designed for high-voltage power conversion and industrial-grade power control scenarios. Its TO3P package offers excellent heat dissipation capability and high reliability, suitable for circuit layouts requiring high power density. The device provides stable switching characteristics within a 600V drain-source voltage range, while supporting a ±30V gate drive voltage, adapting to various drive schemes for easy system integration and design optimization.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V typical
- On-Resistance (VGS=10V): 190mΩ (typical)
- Maximum Drain Current (ID): 20A
- Package: TO3P
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V typical
- On-Resistance (VGS=10V): 190mΩ (typical)
- Maximum Drain Current (ID): 20A
- Package: TO3P
- Process Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Domain and module applications：
**Field and Module Applications**
1. **High-Voltage Switching Power Supplies**: Used in PFC or LLC topologies for server power supplies, communication power supplies, and industrial adapters, leveraging the low conduction loss and fast switching characteristics of super junction technology to improve overall system efficiency.
2. **Photovoltaic Inverters**: Acts as the main switch in the DC-AC conversion stage, suitable for string inverters and microinverters, supporting stable high-voltage bus operation and improving system reliability.
3. **Electric Vehicle Charging Piles**: Used in the power conversion unit of charging modules, withstanding 600V high voltage and 20A current, combined with good heat dissipation design for efficient power transmission.
4. **Motor Drive Control**: Drives high-voltage industrial motors or variable frequency drives, supporting PWM speed regulation, with low Miller effect and stable threshold voltage to reduce switching losses.
5. **UPS Uninterruptible Power Supplies**: Acts as a power switch in the rectifier/inverter dual-conversion architecture, adapting to wide input voltage ranges to ensure continuous power supply to critical loads.
6. **High-Voltage Battery Management Systems**: Used for main circuit on/off control in energy storage or power battery packs, enabling overcurrent and overvoltage protection and load switching to ensure system safety.
7. **Induction Heating Equipment**: Applied in the resonant conversion circuit of high-frequency induction heating power supplies, utilizing the heat dissipation advantages of the TO3P package to extend device life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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