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TK16J60W5,S1VQ-VB Product details

Product introduction:

The TK16J60W5 is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios. The SJ_Multi-EPI (superjunction multi-layer epitaxial) process achieves a good balance between conduction losses and switching speed. The TO3P package offers excellent heat dissipation capability and reliability. The combination of 600V withstand voltage, 15A current carrying capacity, and 280mΩ on-resistance makes it a reliable choice for industrial power supplies, photovoltaic inverters, and high-voltage auxiliary circuits, especially suitable for applications requiring high voltage margin and thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 15A 280(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 15A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 15A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N
VDS=600V: Suitable for three-phase rectification, PFC boost, and high-voltage DC-DC systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk.
VGS=±30V: Large gate drive margin, compatible with common PWM controllers and driver chips, simplifying gate protection circuit design.
Vth=3.5V (typical): Moderate threshold voltage, strong anti-interference capability, can be fully turned on by standard 10V~15V drive voltage.
RDS(on)=280mΩ @ VGS=10V: Low on-resistance, small conduction loss under heavy load conditions, effectively reducing device temperature rise.
ID=15A: Ample continuous current margin, capable of handling peak load demands of most high-voltage power supply and motor drive applications.
Package TO3P: Through-hole mounting, low thermal resistance, suitable for medium to high power systems, facilitating heatsink layout and PCB trace routing, enhancing long-term reliability.

Domain and module applications:


- Switching Power Supply Primary Side Switch: High voltage withstand and low loss characteristics improve flyback/forward topology efficiency and reduce switch stress.
- PFC Power Factor Correction: Super junction technology provides low Qg and low RDS(on), suitable for continuous/critical conduction mode boost circuits.
- Photovoltaic Inverter DC-AC Conversion: 600V withstand voltage covers common string voltage ranges; high current capability supports multi-channel parallel expansion.
- High-Voltage Motor Drive: Low PWM switching loss, combined with good heat dissipation of the TO3P package, suitable for continuous operation scenarios like industrial fans and water pumps.
- UPS Uninterruptible Power Supply: Provides stable switching performance in battery boost and inverter stages; wide safety margin ensures protection during sudden overloads.
- High-Voltage DC-DC Converter: Exhibits low loss advantages in synchronous rectification or primary-side resonant circuits, helping to increase module power density.
- Charging Pile Auxiliary Power Supply: Sufficient voltage margin to handle grid fluctuations and surge impacts, suitable for wide input voltage ranges.

**Selection Summary**: The TK16J60W5 achieves a balance between high voltage withstand, on-resistance, package thermal performance, and system cost. It is a cost-effective general-purpose choice for 600V high-voltage switching applications, especially suitable for industrial-grade projects with strict requirements for reliability and overload capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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