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IPW65R037C6FKSA1-VB Product details
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You are designing a high-power switching power supply or photovoltaic inverter that needs to withstand a bus voltage of up to 600V, while also minimizing conduction losses. Ordinary high-voltage MOSFETs either have high on-resistance or slow switching speeds. The VBsemi IPW65R037C6FKSA1-VB is designed for this—it is based on SJ_Multi-EPI superjunction technology, integrating 600V withstand voltage, 90A high current carrying capacity, and an on-resistance of only 24mΩ in a TO247 package, allowing high-voltage, high-power designs to achieve both high efficiency and high reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | 24(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage withstand: 600V, easily handling high-voltage applications such as three-phase rectification and PFC
- Gate drive range: ±30V, compatible with common PWM drivers and gate driver chips
- Threshold voltage: 3.5V, clear turn-on characteristics, strong anti-interference capability
- On-resistance: 24mΩ (at 10V drive), extremely low loss under high voltage and high current
- Maximum current: 90A, TO247 package offers better heat dissipation, suitable for prolonged heavy-load operation
- Utilizes SJ_Multi-EPI (multi-layer epitaxial super junction) technology, significantly improving the balance between on-resistance and switching performance
- Gate drive range: ±30V, compatible with common PWM drivers and gate driver chips
- Threshold voltage: 3.5V, clear turn-on characteristics, strong anti-interference capability
- On-resistance: 24mΩ (at 10V drive), extremely low loss under high voltage and high current
- Maximum current: 90A, TO247 package offers better heat dissipation, suitable for prolonged heavy-load operation
- Utilizes SJ_Multi-EPI (multi-layer epitaxial super junction) technology, significantly improving the balance between on-resistance and switching performance
Domain and module applications：
- Photovoltaic Inverters / Energy Storage Converters – As the main switch in Boost or full-bridge topologies, improves overall system conversion efficiency with low conduction loss.
- Communication Power Supplies / Server Power Supplies – Operates stably in PFC stages and LLC half-bridges, withstanding high voltage spikes and ensuring long-term full-load operation of the system.
- Electric Vehicle Onboard Chargers (OBC) – Utilizes the high-speed switching characteristics of the super junction structure to reduce switching losses, aiding lightweight design.
- Industrial Motor Drives / Variable Frequency Drives – High voltage withstand and high current margin allow it to handle the inrush current of inductive loads, improving drive reliability.
- High-Power Charging Pile Modules – Acts as a switching device in high-voltage DC-DC converters, reducing thermal stress and increasing power density.
- Uninterruptible Power Supplies (UPS) – Provides stable switching capability in rectifier/inverter stages, ensuring continuous power supply to critical loads.
- High-Voltage DC-DC Converters / Active PFC – When paired with synchronous rectification technology, it can effectively replace traditional high-voltage MOS solutions, achieving efficiency gains and loss reduction.
**One-sentence summary:** The IPW65R037C6FKSA1-VB is not an ordinary super junction MOS tube; it is the "efficiency core" and "reliability cornerstone" for your 600V-level high-voltage, high-power power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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