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TK31N60W5,S1VF-VB Product details
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You are designing a high-power switching power supply or inverter that needs to withstand high voltage and high current, yet worry about heat dissipation issues caused by conduction losses. Ordinary MOSFETs either have insufficient voltage tolerance or high on-resistance, making it difficult to achieve both efficiency and reliability. The VBsemi TK31N60W5 is designed for this—it integrates 600V withstand voltage, 32A current carrying capacity, and an on-resistance of only 85mΩ in a robust TO247 package, allowing high-voltage, high-power designs to no longer compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage withstand: 600V, easily handling high-voltage bus fluctuations
- Gate drive range: ±30V, compatible with wide-range drive circuits
- Threshold voltage: 3.5V, making drive design more robust
- On-resistance: 85mΩ (at 10V drive), significantly reducing conduction loss
- Maximum current: 32A, meeting demanding high-current applications
- Utilizes SJ_Multi-EPI super junction technology, offering excellent switching characteristics and conduction performance
- Gate drive range: ±30V, compatible with wide-range drive circuits
- Threshold voltage: 3.5V, making drive design more robust
- On-resistance: 85mΩ (at 10V drive), significantly reducing conduction loss
- Maximum current: 32A, meeting demanding high-current applications
- Utilizes SJ_Multi-EPI super junction technology, offering excellent switching characteristics and conduction performance
Domain and module applications：
- Main Switch for Switching Power Supplies – Achieves high-efficiency power conversion in LLC or hard-switching topologies.
- Server/Communication Power Supplies – Handles high-voltage side switching tasks, reducing losses and increasing power density.
- Photovoltaic Inverters – Used in the DC-AC conversion stage, fully leveraging high-voltage and high-current advantages.
- Electric Vehicle Charging Pile Modules – Stably handles high-voltage, high-power transmission, ensuring long-term reliable operation.
- Industrial Motor Drives – Acts as a power switching device, withstanding high voltage spikes for smoother driving.
- UPS Uninterruptible Power Supplies – Provides solid power support during battery inversion and mains switching.
- Power Factor Correction (PFC) Circuits – Utilizes low on-resistance and high voltage capability to improve power factor and overall system efficiency.
One-sentence summary: The TK31N60W5 is not just an ordinary MOS tube; it is the "reliable cornerstone" and "efficiency engine" for your high-voltage, high-power designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
