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SIHG28N65E-GE3-VB Product details
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Are you designing a high-efficiency, high-power-density industrial power supply or inverter system that needs to handle a 600V high-voltage bus while also withstanding 31A high current surges? Ordinary high-voltage MOSFETs either have high on-resistance causing severe heating, or high switching losses dragging down overall efficiency. VBsemi SIHG28N65E-GE3-VB is designed for this—it is based on advanced SJ_Multi-EPI super-junction technology, integrating 600V breakdown voltage, 31A current capability, and an ultra-low on-resistance of 90mΩ into a TO247 package, allowing high-voltage, high-power designs to achieve both performance and reliability without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | 90(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage Rating 600V, easily handles high-voltage bus fluctuations
- Gate Drive Range ±30V, compatible with multiple drive solutions
- Threshold Voltage 3.5V, clear and stable switching characteristics
- On-Resistance 90mΩ (at 10V drive), significantly reduces conduction loss
- Maximum Current 31A, TO247 package can also handle high power output
- Super Junction Multi-Epitaxy process, optimizing the balance between on-resistance and switching speed
- Gate Drive Range ±30V, compatible with multiple drive solutions
- Threshold Voltage 3.5V, clear and stable switching characteristics
- On-Resistance 90mΩ (at 10V drive), significantly reduces conduction loss
- Maximum Current 31A, TO247 package can also handle high power output
- Super Junction Multi-Epitaxy process, optimizing the balance between on-resistance and switching speed
Domain and module applications：
- **Switching Power Supplies / Server Power Supplies** – Used as the main PFC or DC-DC switching transistor, reducing conduction losses and improving overall efficiency.
- **Photovoltaic Inverters / Energy Storage Systems** – Reliably operates in MPPT and inverter bridge circuits, handling high-voltage, high-current conditions.
- **Electric Vehicle Charging Piles** – Used in power factor correction and DC-DC conversion stages, ensuring long-term stable operation.
- **Industrial Motor Drives / Inverters** – With low on-resistance and strong surge capability, reduces temperature rise and extends equipment life.
- **Uninterruptible Power Supplies (UPS)** – Plays a key switching role in rectification and inverter topologies, ensuring power supply continuity.
- **High-Voltage Battery Formation Equipment** – Cooperates with precise control to achieve efficient on-off switching of the charge/discharge circuit, improving production line yield.
One-Sentence Summary: SIHG28N65E-GE3-VB is not an ordinary high-voltage MOS tube; it is the "efficiency cornerstone" and "reliable workhorse" for your 600V-class high-power design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
