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TK25N60X,S1F-VB Product details

Product introduction:


TK25N60X,S1F-VB is a Single N-MOS meticulously optimized for high-voltage power switching applications. Using SJ_Multi-EPI super-junction multi-epitaxial technology, it achieves an excellent balance between on-resistance and switching speed. The TO247 package offers superior heat dissipation and current handling capability, making it suitable for high-power, high-reliability industrial applications. The combination of 600V breakdown voltage, 26A continuous current, and 115mΩ on-resistance makes it an ideal power switch option for high-voltage power supplies, inverters, and industrial drives.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 26A 115(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N

- **VDS=600V**: Covers high-voltage scenarios such as three-phase rectification, photovoltaic boost, and industrial bus, providing ample margin for voltage spikes and enhancing system avalanche capability.
- **VGS=±30V**: Wide gate drive voltage tolerance, compatible with common PWM drivers and gate driver ICs, reducing the risk of false triggering.
- **Vth=3.5V (typical)**: Moderate threshold voltage, strong anti-interference capability, can be fully turned on by standard 10V~15V drive voltage.
- **RDS(on)=115mΩ @ VGS=10V**: Super junction technology achieves low conduction loss, controllable temperature rise under high current full load, simplifying thermal design.
- **ID=26A**: Ample continuous current margin, capable of handling high transient current surges such as motor startup and capacitor charging.
- **Package TO247**: Through-hole mounting, low thermal resistance, suitable for scenarios requiring bottom-side heat sinking or high-power PCB layout, offering high long-term reliability.

Domain and module applications:


- **Switching Power Supplies**: Used as the main switching transistor in LLC half-bridge, active PFC, and other topologies, with low on-resistance and low gate charge combined to improve efficiency across the full load range.
- **Photovoltaic Inverters**: 600V voltage rating matches photovoltaic bus voltage, superjunction structure reduces conduction losses, helping micro-inverters and string inverters improve conversion efficiency.
- **Motor Drives**: In industrial inverters, servo drives, and high-power BLDC controllers, the TO247 package facilitates heat sink layout, and the 26A current margin meets overload requirements.
- **UPS Uninterruptible Power Supplies**: High-frequency switching characteristics and low loss performance make it suitable for the rectification/inversion stages of online UPS systems, enhancing system load capacity and reliability.
- **High-Voltage DC-DC Converters**: Can be applied in electric vehicle charging pile auxiliary power supplies, communication base station high-voltage power supplies, etc., with sufficient voltage margin and strong surge immunity.
- **Industrial Electromagnetic Heating**: Low switching losses in high-frequency resonant circuits, combined with low thermal resistance packaging, enabling long-term stable operation in high-power heating equipment.

**Selection Summary**: TK25N60X,S1F-VB achieves a balanced optimization between high voltage withstand, low on-resistance, high current carrying capacity, and package thermal performance. It is a cost-effective general-purpose choice for 600V high-voltage power switching applications, especially suitable for industrial and energy projects with strict requirements for reliability, heat dissipation, and overload capability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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