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SIHG065N65E-GE3-VB Product details
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Are you designing a high-power server power supply or photovoltaic inverter with a bus voltage of 400V~600V, yet requiring overall system efficiency to exceed 98%? Ordinary high-voltage MOSFETs either suffer from high conduction loss or high switching stress, overburdening the thermal system. VBsemi SIHG065N65E-GE3-VB is designed for this—it is based on SJ_Multi-EPI super-junction technology, integrating 650V breakdown voltage, 41A current capability, and an ultra-low on-resistance of only 62mΩ into a standard TO247 package, allowing high-voltage, high-power converters to perform effortlessly even under harsh temperature conditions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage Rating 650V, covers three-phase rectification, PFC boost, and other high bus voltage scenarios
- Gate Drive Range ±30V, compatible with various PWM controllers and driver ICs
- Threshold Voltage 3.5V, strong anti-interference capability, suitable for industrial-grade drive logic
- On-Resistance 62mΩ (at 10V drive), extremely low loss under high voltage and high current
- Maximum Current 41A, TO247 package with good heat dissipation, higher power density
- Super Junction Multi-Epitaxy technology, optimizing the balance between on-resistance and gate charge
- Gate Drive Range ±30V, compatible with various PWM controllers and driver ICs
- Threshold Voltage 3.5V, strong anti-interference capability, suitable for industrial-grade drive logic
- On-Resistance 62mΩ (at 10V drive), extremely low loss under high voltage and high current
- Maximum Current 41A, TO247 package with good heat dissipation, higher power density
- Super Junction Multi-Epitaxy technology, optimizing the balance between on-resistance and gate charge
Domain and module applications：
- **Server/Communication Power Supplies** – As the PFC boost switching transistor, effectively reducing losses after the rectifier bridge, improving full-load efficiency.
- **Photovoltaic Inverters/Energy Storage Converters** – Handles high-frequency switching in Boost or H4 bridge arms, with low RDS(on) reducing temperature rise and extending system life.
- **Electric Vehicle DC Charging Piles** – Used in the high-voltage DC-DC conversion stage, withstanding 650V bus voltage surges, delivering stable high power output.
- **Industrial Inverters/Servo Drives** – Used as bus switches or brake transistors after 380V three-phase input rectification, with strong avalanche capability.
- **Uninterruptible Power Supplies (UPS)** – Provides low-loss paths in line switching and inverter stages, ensuring critical loads stay powered.
- **High-Power LED Driver Power Supplies** – Used as the main switching transistor in flyback or LLC topologies, easily handling high-voltage input and wide load ranges.
- **Welding Machines/Induction Heating Equipment** – Leveraging the heat dissipation advantages of TO247 and the low conduction losses of superjunction, capable of handling frequent overload surges.
**One-Sentence Summary:** SIHG065N65E-GE3-VB is not an ordinary MOS tube; it is the "efficiency engine" and "reliability cornerstone" for your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
