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TK35N65W,S1F-VB Product details
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VBsemi TK35N65W,S1F-VB is a Single N-Channel power MOSFET using SJ_Multi-EPI super-junction technology, designed for high-voltage, high-current power conversion and industrial-grade control applications. Its TO247 package offers excellent heat dissipation and high power density, making it suitable for medium-to-high power switching power supplies, inverters, and motor drives. The device provides stable and reliable switching characteristics within a 650V drain-source voltage range. With a low on-resistance of 75mΩ, it significantly reduces conduction loss, improving overall system efficiency. Additionally, the ±30V gate drive range enhances system design compatibility and robustness.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Drain-Source Voltage (VDS): 650V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 75mΩ (typical)
- Maximum Drain Current (ID): 36A
- Package: TO247
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V (typical)
- On-Resistance (VGS=10V): 75mΩ (typical)
- Maximum Drain Current (ID): 36A
- Package: TO247
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Domain and module applications：
1. **Switching Power Supplies (SMPS)**: Used as the main switching transistor for efficient AC-DC or DC-DC conversion, utilizing low on-resistance and high voltage withstand characteristics to improve conversion efficiency and reduce heat generation.
2. **Photovoltaic Inverters**: Used as the DC-AC conversion power stage in distributed photovoltaic power generation systems, supporting high-voltage bus input for reliable high-power conversion.
3. **UPS Uninterruptible Power Supplies**: Used in the rectification/inversion stages of online UPS systems, ensuring power supply continuity and load capacity.
4. **Industrial Motor Drives**: Drives three-phase asynchronous motors or permanent magnet synchronous motors, suitable for inverters, servo drives, and pump loads, supporting high-frequency PWM control.
5. **Charging Piles and Onboard Power Supplies**: Used as high-voltage power switches in DC charging pile modules or onboard OBCs, meeting high-voltage, high-current operating requirements.
6. **Welding and Cutting Equipment**: Used in the high-frequency power conversion circuit of inverter welders, enhancing equipment durability under harsh operating conditions.
7. **High-Voltage Auxiliary Power Supplies**: Used in auxiliary power supply modules for industrial control, communication base stations, etc., providing stable and efficient high-voltage conversion solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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