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TK065N65Z,S1F-VB Product details
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Still struggling with conduction loss and heat dissipation in high-voltage and high-current applications? VBsemi TK065N65Z,S1F-VB is here to help! This TO247-packaged N-MOSFET, utilizing super-junction multi-epitaxial technology, achieves an ultra-low on-resistance of 75mΩ while withstanding 650V breakdown voltage and 36A high current, significantly reducing conduction loss compared to similar products. Combined with fast switching characteristics and a ±30V wide gate drive range, it easily handles high-intensity scenarios such as industrial power supplies and photovoltaic inverters, making it the "hardcore workhorse" for high-voltage power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | 75(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 36A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage Rating: 650V (sufficient margin for high-voltage applications, safe and reliable)
- Drive Range: ±30V (compatible with various gate drive circuits, strong overvoltage capability)
- Turn-On Threshold: 3.5V (stable threshold, clear switching characteristics)
- Ultra-Low On-Resistance: 75mΩ @ 10V (low conduction loss, significantly reduced heat generation)
- High Current Capability: 36A (single device handles high power, simplifies parallel design)
- Package: TO247 (excellent thermal performance, suitable for high-power PCB layout)
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy, balancing high voltage and low resistance)
- Drive Range: ±30V (compatible with various gate drive circuits, strong overvoltage capability)
- Turn-On Threshold: 3.5V (stable threshold, clear switching characteristics)
- Ultra-Low On-Resistance: 75mΩ @ 10V (low conduction loss, significantly reduced heat generation)
- High Current Capability: 36A (single device handles high power, simplifies parallel design)
- Package: TO247 (excellent thermal performance, suitable for high-power PCB layout)
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy, balancing high voltage and low resistance)
Domain and module applications：
– Seven Major Hot Scenarios, One Solution**
- Switching Power Supplies: Efficient output for LLC, full-bridge, and other topologies, improving overall efficiency
- Photovoltaic Inverters: Rock-solid DC-AC conversion, supporting green energy grid connection
- Industrial Motor Drives: Inverter, servo motor control, powerful and reliable
- Uninterruptible Power Supplies (UPS): Fast response in energy storage and switching circuits, ensuring continuous power supply
- Electric Vehicle Charging Piles: Core switch for power modules, handling high-voltage and high-current impacts
- PFC Power Factor Correction: Reduces harmonic losses, improves power utilization
- High-Voltage DC-DC Converters: Stable and efficient for new energy vehicles, communication base station power supplies
TK065N65Z,S1F-VB – High voltage, low resistance, compact size, powerful performance – making your power design more relaxed!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
