中文
English
IPI120N04S4-01M-VB Product details
Back to previous pageProduct introduction：
You are designing a high-power DC-DC converter or motor drive that needs to withstand current surges of hundreds of amps while minimizing conduction losses. Ordinary MOS tubes either have high resistance causing severe heating, or insufficient current capacity requiring multiple tubes in parallel, increasing PCB area and cost. VBsemi IPI120N04S4-01M-VB is designed for this—it integrates 40V withstand voltage, 150A continuous current capability, and an on-resistance of only 1.7mΩ into a TO262 package, setting a new benchmark for high-density, high-reliability power conversion.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | 1.7(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO262 | Single-N | 40V | 3.3V | 150A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO262 | Single-N |
- Gate-Source Voltage Range: ±20V, compatible with various drive voltages, offering greater application flexibility
- Threshold Voltage: 3.3V typical, clear switching characteristics, strong noise immunity
- On-Resistance: 1.7mΩ (at 10V drive), negligible loss, boosting efficiency
- Maximum Current: 150A, eliminating the need for multiple parallel transistors in high-power applications
- Trench technology, achieving an excellent balance between switching performance and conduction loss
- Threshold Voltage: 3.3V typical, clear switching characteristics, strong noise immunity
- On-Resistance: 1.7mΩ (at 10V drive), negligible loss, boosting efficiency
- Maximum Current: 150A, eliminating the need for multiple parallel transistors in high-power applications
- Trench technology, achieving an excellent balance between switching performance and conduction loss
Domain and module applications：
- **Automotive Power / Battery Management** – Achieves efficient power switching in 12V/24V systems, reliably cutting off overcurrent with protection circuits.
- **High-Power DC-DC Converters** – Replaces inefficient diodes in synchronous rectification topologies, improving conversion efficiency by 2~3% and reducing thermal stress.
- **UPS Uninterruptible Power Supplies** – High voltage margin and high current capability ensure stable output under sudden load additions.
- **Motor Controllers / Robotics** – Low on-resistance reduces heat generation; TO262 package facilitates heat dissipation, suitable for continuous high-power operation.
- **Lithium Battery Protection Boards** – Quickly cuts off the main circuit during short circuits or overcurrent to ensure cell safety, suitable for high-rate discharge applications.
**One-Sentence Summary: The IPI120N04S4-01M-VB is not an ordinary MOS tube; it is your "low-resistance switch" and "efficiency engine" for high-current power conversion.**
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
