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2SJ438,Q(J-VB Product details
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You are designing a power switch or battery protection circuit that requires high reliability, facing a bus voltage of -60V and a load current of up to 20A. Ordinary P-channel MOS tubes either have excessive voltage drop or high thermal runaway risk. VBsemi 2SJ438,Q(J-VB is designed for this—it uses mature Trench technology, integrating -60V withstand voltage, -20A current-carrying capacity, and a low on-resistance of 100mΩ into a TO220F fully isolated package, making high-side switch design safer, simpler, and more efficient.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | 120(mΩ) | 100(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -60V | -1.7V | -20A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
- Drain-Source Voltage: -60V, suitable for 48V and below systems, with ample safety margin
- Gate-Source Voltage Range: ±20V, compatible with various drive voltages, strong gate overvoltage capability
- Threshold Voltage: -1.7V, reliable turn-on with low-voltage control signals
- On-Resistance: 100mΩ (10V drive), 120mΩ (4.5V drive), low loss and minimal heat generation
- Maximum Current: -20A, TO220F package with excellent heat dissipation, suitable for medium to high power applications
- Trench technology, superior switching performance, good EMI characteristics
- Gate-Source Voltage Range: ±20V, compatible with various drive voltages, strong gate overvoltage capability
- Threshold Voltage: -1.7V, reliable turn-on with low-voltage control signals
- On-Resistance: 100mΩ (10V drive), 120mΩ (4.5V drive), low loss and minimal heat generation
- Maximum Current: -20A, TO220F package with excellent heat dissipation, suitable for medium to high power applications
- Trench technology, superior switching performance, good EMI characteristics
Domain and module applications：
- Power Reverse Polarity Protection Circuits – Used as a high-side switch in series with the input path, offering low voltage drop and low temperature rise, effectively preventing damage to downstream equipment from incorrect power polarity.
- Battery Charging Management / Discharge Protection Boards – Achieves fast overcurrent and over-discharge shutdown at -60V voltage levels, safeguarding cell safety.
- Industrial Control / Motor Drives – Used for on/off control of small to medium power DC motors, enabling smooth speed control with PWM.
- Communication Base Station Power Supplies – Performs load on/off control in -48V power systems, withstanding voltage surges and offering high reliability.
- Power Tools / Garden Machinery – Utilizes low on-resistance and good heat dissipation of the TO220F package for long-duration, high-current operation without overheating.
- Solar / Energy Storage Systems – Acts as a protection switch between battery packs and inverters, offering high voltage withstand and ample margin.
- Automotive Electronics / Marine Electronics – Withstands wide voltage fluctuations, providing a stable power path.
**One-Sentence Summary:** The 2SJ438,Q(J-VB is not an ordinary P-channel MOS tube; it is the "safety gatekeeper" and "efficiency champion" of your medium-to-high voltage power management.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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