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FX30KMJ-3#B00-VB Product details
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You are designing a high-power battery management system or motor drive circuit, needing a P-channel switching transistor that can withstand instantaneous high currents, has low heat generation, and is easy to dissipate heat. Ordinary surface-mount MOS transistors struggle with 55A current, while through-hole packages may take up too much space. VBsemi FX30KMJ-3#B00-VB is designed for this—it uses a TO220F fully insulated package, perfectly combining -30V withstand voltage, -55A ultra-high current capacity, and an on-resistance as low as 11mΩ, providing a solid and reliable solution for high-power P-channel switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | 13(mΩ) | 11(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-P | -30V | -2.5V | -55A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-P |
- Drain-Source Voltage -30V, meets most low-voltage P-channel application scenarios
- Gate Drive Range ±20V, compatible with various drive voltages, more flexible to use
- Threshold Voltage -2.5V, easy for logic level drive, simpler design
- On-Resistance 11mΩ (10V drive), extremely low losses, significantly reduced heat generation
- Maximum Current -55A, TO220F package with excellent heat dissipation capability, stable continuous output
- Trench technology, excellent switching performance, high reliability
- Gate Drive Range ±20V, compatible with various drive voltages, more flexible to use
- Threshold Voltage -2.5V, easy for logic level drive, simpler design
- On-Resistance 11mΩ (10V drive), extremely low losses, significantly reduced heat generation
- Maximum Current -55A, TO220F package with excellent heat dissipation capability, stable continuous output
- Trench technology, excellent switching performance, high reliability
Domain and module applications：
- **Battery Protection Board / Energy Storage System** – Acts as a high-side switch, quickly cutting off the circuit during overcurrent or short circuit to protect battery cells, suitable for high-current charge/discharge scenarios.
- **Motor Drive Control** – Used for PWM speed control of DC brushed motors or power tools, low on-resistance effectively reduces voltage drop, improving system efficiency.
- **Power Reverse Polarity Protection** – Utilizes P-channel characteristics to implement a low-loss reverse polarity protection circuit, replacing traditional diode solutions, reducing power consumption and temperature rise.
- **Vehicle Electrical Control** – Provides on/off control for high-power loads like car lights and heaters, withstanding vehicle voltage fluctuations, stable and reliable.
- **DC-DC Converter / Load Switch** – In power topologies requiring a high-side switch, enables efficient power transfer, reducing thermal losses.
- **High-Power LED Driver** – Carries high current with extremely low on-resistance, ensuring constant current accuracy and long-term operational stability.
**One-sentence Summary:** The FX30KMJ-3#B00-VB is not an ordinary P-channel MOSFET; it is the "power switch champion" combining low loss, high reliability, and easy heat dissipation in your high-current power control system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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