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TK17A80W,S4X-VB Product details
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You are designing a high-power-density switching power supply or industrial drive circuit, needing to withstand bus voltages up to 800V, while also hoping to reduce conduction losses and simplify thermal design. Ordinary high-voltage MOS transistors either have high on-resistance or limited package size. VBsemi TK17A80W,S4X-VB is designed for this—it uses SJ_Multi-EPI superjunction technology, achieving 800V withstand voltage, 18A current capacity, and 220mΩ on-resistance in a TO220F fully insulated package, allowing high-voltage and high-current applications to no longer compromise on heat dissipation and space.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 18A | 220(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage 800V, covers three-phase rectification, PFC and other high-voltage scenarios, ample safety margin
- Gate Drive Range ±30V, compatible with common PWM drivers and industrial control logic
- Threshold Voltage 3.5V, strong anti-interference capability, stable switching characteristics
- On-Resistance 220mΩ (10V drive), maintains low losses even at high voltage
- Maximum Current 18A, TO220F package balances heat dissipation and electrical isolation
- Technology SJ_Multi-EPI: Super Junction Multi-Epitaxy process, optimizes trade-off between breakdown voltage and on-resistance
- Gate Drive Range ±30V, compatible with common PWM drivers and industrial control logic
- Threshold Voltage 3.5V, strong anti-interference capability, stable switching characteristics
- On-Resistance 220mΩ (10V drive), maintains low losses even at high voltage
- Maximum Current 18A, TO220F package balances heat dissipation and electrical isolation
- Technology SJ_Multi-EPI: Super Junction Multi-Epitaxy process, optimizes trade-off between breakdown voltage and on-resistance
Domain and module applications：
- Switching Power Supply / LLC Resonant Converter – As the main switch tube, operates efficiently under high input voltage, reducing temperature rise.
- PFC Power Factor Correction Module – Utilizes low on-resistance and fast switching characteristics to improve overall efficiency.
- Industrial Motor Driver / Inverter – Withstands high bus voltage spikes, reliably driving medium and small power motors.
- LED Lighting Power Supply – Ample voltage margin, suitable for wide-voltage input constant current drive solutions.
- High-Voltage DC-DC Converter – Replaces traditional MOS in flyback or forward topologies, reducing switching losses.
- Photovoltaic Inverter Auxiliary Power Supply – Handles voltage fluctuations from solar panels, providing stable power to the control system.
- Charging Pile / Electric Vehicle On-Board Charger – Meets high-voltage and high-current operating requirements, enhancing system reliability.
One-sentence Summary: The TK17A80W,S4X-VB is not an ordinary high-voltage MOS tube; it is the "voltage endurance rock" and "efficiency engine" for your high-voltage power and industrial applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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