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2SK3457(2)-AZ-VB Product details
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You are designing a high-efficiency, high-reliability switching power supply, but facing the severe challenge of an 800V high-voltage bus—ordinary MOS transistors either lack sufficient voltage tolerance or have high conduction losses, leading to serious temperature rise in the whole unit. VBsemi 2SK3457(2)-AZ-VB is designed for this—it is based on advanced SJ_Multi-EPI superjunction technology, perfectly packaging 800V withstand voltage, 5A current capacity, and 1100mΩ on-resistance in a TO220F fully insulated plastic package, allowing high-voltage power supply design to balance performance and safety without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage 800V, easily handles three-phase rectification, PFC and other high-voltage applications, ample safety margin
- Gate Drive Range ±30V, compatible with various driver ICs, strong anti-interference capability
- Threshold Voltage 3.5V, reliable turn-on with standard logic levels
- On-Resistance 1100mΩ (10V drive), controllable losses at high voltage, lower heat generation
- Maximum Current 5A, combined with Super Junction low Qg characteristics, suitable for high-frequency switching applications
- TO220F package, fully insulated design, no additional insulation pad required, easier installation
- Gate Drive Range ±30V, compatible with various driver ICs, strong anti-interference capability
- Threshold Voltage 3.5V, reliable turn-on with standard logic levels
- On-Resistance 1100mΩ (10V drive), controllable losses at high voltage, lower heat generation
- Maximum Current 5A, combined with Super Junction low Qg characteristics, suitable for high-frequency switching applications
- TO220F package, fully insulated design, no additional insulation pad required, easier installation
Domain and module applications：
- **Switch Mode Power Supply (SMPS)** – As a high-voltage power switch tube, used in flyback and forward topologies, effectively reducing switching losses and improving overall efficiency.
- **LED Lighting Driver Power Supply** – Operates stably under a wide voltage input of 85~265V, providing reliable constant current drive for indoor and outdoor lighting.
- **Charging Pile Auxiliary Power Supply** – Withstands high-voltage bus fluctuations, providing stable power to the control board, adapting to harsh grid environments.
- **Industrial Inverter/Servo Drive** – Used in auxiliary power supplies or braking circuits, withstanding high dv/dt shocks, improving system reliability.
- **Photovoltaic Inverter** – Acts as the main switch tube in the Boost circuit, enabling efficient MPPT tracking and reducing power losses.
- **Electric Vehicle On-Board Charger (OBC)** – Meets high-voltage bus requirements, enabling miniaturized and lightweight design with super junction technology.
- **Adapter/Fast Charging Power Supply** – Replaces traditional planar MOS, achieving higher voltage tolerance and lower temperature rise in the same package, extending service life.
**One-sentence Summary:** The 2SK3457(2)-AZ-VB is not an ordinary MOS tube; it is the "voltage endurance guardian" and "efficiency multiplier" for your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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