中文
English
FCPF2250N80Z-VB Product details
Back to previous pageProduct introduction：
VBsemi FCPF2250N80Z-VB is a Single N-channel power field-effect transistor using SJ_Multi-EPI process, designed for high-voltage power conversion and industrial control scenarios. Its TO220F fully insulated package balances excellent thermal performance with ease of installation, suitable for medium-to-high power density circuit layouts. The device provides stable switching characteristics within an 800V drain-source voltage range, with a wide gate drive voltage range of ±30V, adapting to various drive schemes, facilitating system-level integration and reliability design.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | 1100(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 800V | 3.5V | 5A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V typical
- On-Resistance (VGS=10V): 1100mΩ typical
- Maximum Drain Current (ID): 5A
- Package: TO220F
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V typical
- On-Resistance (VGS=10V): 1100mΩ typical
- Maximum Drain Current (ID): 5A
- Package: TO220F
- Technology: SJ_Multi-EPI (Super Junction Multi-Epitaxy)
Domain and module applications：
1. **High-Voltage Switching Power Supply**: Used as the main switch tube in flyback or forward topologies, utilizing super junction structure to reduce conduction and switching losses, improving overall conversion efficiency.
2. **Photovoltaic Inverter Auxiliary Power Supply**: Suitable for auxiliary power modules in string inverters, withstanding high bus voltage to ensure stable system operation.
3. **Industrial Equipment Drive Circuit**: Used in auxiliary power supplies or Power Factor Correction (PFC) circuits of inverters and servo drives, meeting high-voltage, medium-current requirements.
4. **Charging Pile Power Module**: Acts as a switching device in the high-voltage DC-DC conversion unit inside electric vehicle charging piles, enhancing reliability and overvoltage margin.
5. **Uninterruptible Power Supply (UPS)**: Used in the power stage circuit of online UPS, supporting high-voltage bus switching and battery management, improving system robustness.
6. **Welding Machine and Induction Heating Equipment**: Serves as a high-voltage switch in inverter circuits, adapting to high-frequency operating conditions and providing stable power output.
7. **High-Voltage Battery Management System**: Used for high-voltage path protection on the battery side of power tools or energy storage systems, enabling fast shutdown and safe isolation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
