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TK6R8A08QM,S4X-VB Product details
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You are designing a high power density power module or motor drive circuit that needs to withstand up to 75A continuous current while balancing heat dissipation and reliability. Ordinary MOS tubes either have excessive conduction losses or insufficient withstand voltage, forcing you to constantly trade off between performance and cost. VBsemi TK6R8A08QM,S4X-VB is designed for this—it uses a TO220F package, integrating 80V withstand voltage, 75A current carrying capacity, and only 6.4mΩ on-resistance, combined with advanced Trench technology, providing a robust and powerful switching solution for industrial-grade high-current applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | 8.7(mΩ) | 6.4(mΩ) | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 80V | 3V | 75A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Withstand voltage 80V, covering 48V systems and various application scenarios below, with ample safety margin
- Gate drive range ±20V, compatible with multiple drive voltages, adaptable to 4.5V~10V logic levels
- Threshold voltage 3V, clear switching characteristics, strong anti-interference capability
- On-resistance: 8.7mΩ at 4.5V drive, as low as 6.4mΩ at 10V drive, greatly reducing conduction losses
- Maximum continuous drain current 75A, TO220F fully insulated package, no additional insulating pad required, more direct heat dissipation
- Trench process, excellent figure of merit, fast switching speed, low switching losses
- Gate drive range ±20V, compatible with multiple drive voltages, adaptable to 4.5V~10V logic levels
- Threshold voltage 3V, clear switching characteristics, strong anti-interference capability
- On-resistance: 8.7mΩ at 4.5V drive, as low as 6.4mΩ at 10V drive, greatly reducing conduction losses
- Maximum continuous drain current 75A, TO220F fully insulated package, no additional insulating pad required, more direct heat dissipation
- Trench process, excellent figure of merit, fast switching speed, low switching losses
Domain and module applications：
- Power Tools / Garden Machinery – As a power switch for the brushless motor drive stage, withstanding high current surges; low internal resistance ensures no overheating during prolonged high-load operation.
- Electric Vehicle Controllers / E-bikes – 80V withstand voltage suitable for 48V~72V battery packs; 75A current capability meets climbing and acceleration needs, improving overall vehicle reliability.
- Power Adapters / Server Power Supplies – As a switch in synchronous rectification or LLC topologies; 6.4mΩ on-resistance effectively improves conversion efficiency, reducing heat dissipation pressure.
- Battery Protection Boards / Energy Storage Systems – Fast response to overcurrent and short-circuit protection; high-current switching capability provides a solid barrier for energy storage battery packs.
- Industrial Motor Drives / Variable Frequency Drives – Large voltage withstand margin, strong surge immunity, suitable for continuous operation in harsh grid environments.
- Automotive DC-DC Converters – Withstanding vehicle voltage fluctuations; combined with low loss characteristics, providing efficient and stable power conversion for on-board equipment.
- High-Power LED Driver Power Supplies – Stable constant current switching control; low heat generation characteristics extend power supply life, supporting high-brightness lighting scenarios.
**One-Sentence Summary:** TK6R8A08QM,S4X-VB is not an ordinary MOS transistor; it is the 'low-loss switching tool' and 'reliable current path' for your high-power-density design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
