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TK16A60W,S4VX-VB Product details
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You are designing a high power density switching power supply that needs to withstand 600V high voltage while controlling losses and saving heat dissipation space. Ordinary MOS tubes either have insufficient withstand voltage or high on-resistance causing severe heating. VBsemi TK16A60W,S4VX-VB is designed for this—it uses superjunction multi-epitaxial technology, integrating 600V withstand voltage, 15A current carrying capacity, and only 280mΩ on-resistance into a TO220F fully isolated package, allowing high-voltage power supply designs to achieve an ideal balance between performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | 280(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 600V | 3.5V | 15A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Withstand voltage 600V, covering industrial and consumer high-voltage applications
- Gate drive range ±30V, compatible with common PWM controllers
- Threshold voltage 3.5V, simple and reliable drive logic
- On-resistance 280mΩ (at 10V drive), lower conduction losses under high voltage
- Maximum current 15A, achieving high-power output with superjunction structure
- Utilizes SJ_Multi-EPI superjunction technology, optimizing switching speed and conduction characteristics
- Gate drive range ±30V, compatible with common PWM controllers
- Threshold voltage 3.5V, simple and reliable drive logic
- On-resistance 280mΩ (at 10V drive), lower conduction losses under high voltage
- Maximum current 15A, achieving high-power output with superjunction structure
- Utilizes SJ_Multi-EPI superjunction technology, optimizing switching speed and conduction characteristics
Domain and module applications：
- Switching Power Supplies / Adapters – As a high-voltage main switch, effectively improving conversion efficiency, reducing temperature rise, suitable for 100W-class power supply design.
- LED Lighting Drivers – Operating stably in high-voltage constant current circuits, supporting a wider input voltage range, ensuring long lamp life.
- Industrial Control Auxiliary Power Supplies – Withstanding grid fluctuations and surge impacts, providing a reliable power stage solution for control systems.
- Electric Vehicle Chargers – Utilizing low on-resistance and good heat dissipation package to reduce power loss under high current, improving charging reliability.
- Photovoltaic Inverters / Microinverters – Achieving efficient switching on the high-voltage DC bus side, aiding energy conversion in new energy systems.
- Adapter PFC Circuits – Performing stably in boost power factor correction topologies, using superjunction technology to reduce switching losses.
- Home Appliance Variable Frequency Drives – Used for high-voltage bus power supply or power management, improving overall energy efficiency and electromagnetic compatibility.
**One-Sentence Summary:** TK16A60W,S4VX-VB is not an ordinary MOS transistor; it is the 'superjunction efficiency core' and 'reliable power cornerstone' for your high-voltage power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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