中文
English
TK155A65Z,S4X-VB Product details
Back to previous pageProduct introduction：
Are you designing a high power density power supply but facing challenges with high-voltage switching losses and heat dissipation? Ordinary MOS tubes either have insufficient withstand voltage or excessive on-resistance, leading to uncontrolled system temperature rise. VBsemi TK155A65Z,S4X-VB is designed for this—it uses advanced multi-epitaxial superjunction (SJ_Multi-EPI) technology, perfectly integrating 650V high withstand voltage, 18A high current carrying capacity, and 230mΩ on-resistance into a TO220F isolated package, allowing high-voltage power supply designs to find the ideal balance between performance and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | 230(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO220F | Single-N | 650V | 3.5V | 18A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO220F | Single-N |
- Withstand voltage 650V, easily handling high-voltage bus fluctuations, with ample safety margin
- Gate drive range ±30V, compatible with common PWM drive signals, offering more flexible circuit design
- Threshold voltage 3.5V, clear switching characteristics, strong anti-interference capability
- On-resistance 230mΩ (at 10V drive), high-voltage superjunction structure effectively reduces conduction losses
- Maximum current 18A, achieving efficient and reliable high-power output in TO220F package
Domain and module applications：
- Switching Power Supplies / Server Power Supplies – As a high-voltage power switch, significantly improving overall efficiency and reducing heat dissipation pressure.
- Electric Vehicle On-Board Chargers (OBC) – 650V withstand voltage combined with low on-resistance, adapting to wide vehicle voltage input, ensuring charging safety.
- Photovoltaic Inverters / Energy Storage Systems – Undertaking high-frequency switching tasks in DC-AC conversion, aiding efficient clean energy conversion.
- Industrial Motor Drives – Leveraging the high dv/dt tolerance and low loss characteristics of superjunction technology to improve drive system reliability.
- UPS Uninterruptible Power Supplies – Achieving low-loss switching in rectifier and inverter stages, extending battery backup time.
- Adapters / Chargers (PD Fast Charging) – Applied in high-voltage side switching circuits, adapting to wide output range, enhancing power density.
- Power Factor Correction (PFC) Circuits – Meeting high power factor requirements with lightweight design and low conduction loss, simplifying thermal design.
**One-Sentence Summary:** TK155A65Z,S4X-VB is not an ordinary high-voltage MOS transistor; it is the power core that balances 'efficiency' and 'reliability' in your high-voltage power system.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
