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SIHB068N60EF-T5GE3-VB Product details
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You are designing a high-efficiency switching power supply, needing to maintain low losses and high reliability under high input voltage? Ordinary high-voltage MOSFETs either have high on-resistance causing severe heating, or insufficient switching performance dragging down overall efficiency. The VBsemi SIHB068N60EF-T5GE3-VB is designed for this—it integrates 600V withstand voltage, 41A continuous current capability, and an on-resistance of only 62mΩ in a TO263 package, combined with SJ_Multi-EPI superjunction technology, allowing high-voltage power designs to balance performance and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | 62(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 600V | 3.5V | 41A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating 600V: Meets three-phase industrial and high-voltage DC-DC application requirements
- Gate Drive Range ±30V: Adaptable to various drive circuits
- Threshold Voltage 3.5V: Clear switching characteristics, strong noise immunity
- On-Resistance 62mΩ (at 10V drive): Significantly reduces conduction losses
- Maximum Current 41A: TO263 package can also handle high currents
- Super Junction Multi-Epitaxial (SJ_Multi-EPI) Technology: Optimizes balance between on-resistance and switching speed
- Gate Drive Range ±30V: Adaptable to various drive circuits
- Threshold Voltage 3.5V: Clear switching characteristics, strong noise immunity
- On-Resistance 62mΩ (at 10V drive): Significantly reduces conduction losses
- Maximum Current 41A: TO263 package can also handle high currents
- Super Junction Multi-Epitaxial (SJ_Multi-EPI) Technology: Optimizes balance between on-resistance and switching speed
Domain and module applications：
**Domain and Module Applications (Real-World Scenarios)**
- Switching Power Supplies / Server Power Supplies – As a high-voltage main switch, effectively reduces conduction losses, improving overall conversion efficiency.
- Electric Vehicle On-Board Chargers (OBC) – Withstands high-voltage bus surges, supporting high-power charging and discharging with low losses.
- Photovoltaic Inverters / Energy Storage Converters – Reliably handles high-voltage DC side power conversion, aiding efficient grid connection of new energy systems.
- Industrial Motor Drives / Variable Frequency Drives – Maintains stable switching under high voltage and high current conditions, reducing heat and stress.
- High-Voltage DC-DC Converters – Leverages superjunction advantages in LLC, phase-shifted full bridge, and other topologies to achieve high power density design.
- Uninterruptible Power Supplies (UPS) – Provides robust switching capability, ensuring continuous power supply to critical loads.
- Active PFC Circuits – Reduces rectification losses with low on-resistance, improving the overall efficiency of the power factor correction stage.
One-Sentence Summary: SIHB068N60EF-T5GE3-VB is not just a high-voltage MOS tube; it is the "high-efficiency heart" and "reliable guardian" of your 600V-class power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
