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SIHB240N65E-GE3-VB Product details
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You are designing a high-efficiency, high power density industrial power supply or new energy device, needing a switch that can withstand 650V high voltage and 20A high current without being dragged down by conduction losses. The VBsemi SIHB240N65E-GE3-VB is designed for this—based on SJ_Multi-EPI superjunction technology, it integrates 650V withstand voltage, 20A current carrying capability, and an on-resistance of 160mΩ in a standard TO263 package, allowing high-voltage power designs to achieve an ideal balance between reliability and performance, free from heat dissipation and board space concerns.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO263 | Single-N | 650V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO263 | Single-N |
- Voltage Rating 650V: Easily handles high-voltage bus and surge impacts
- Gate Drive Range ±30V: Compatible with common PWM controllers and driver ICs
- Threshold Voltage 3.5V: Clear switching characteristics, strong noise immunity
- On-Resistance 160mΩ (at 10V drive): Maintains extremely low losses even at high currents
- Maximum Current 20A: TO263 package offers excellent thermal path, suitable for demanding thermal environments
- Super Junction (SJ_Multi-EPI) Technology: Significantly reduces figure of merit, improves switching speed and efficiency
- Gate Drive Range ±30V: Compatible with common PWM controllers and driver ICs
- Threshold Voltage 3.5V: Clear switching characteristics, strong noise immunity
- On-Resistance 160mΩ (at 10V drive): Maintains extremely low losses even at high currents
- Maximum Current 20A: TO263 package offers excellent thermal path, suitable for demanding thermal environments
- Super Junction (SJ_Multi-EPI) Technology: Significantly reduces figure of merit, improves switching speed and efficiency
Domain and module applications：
**Domain and Module Applications (Real-World Scenarios)**
- Switching Power Supplies / Server Power Supplies – As a high-voltage power stage main switch, effectively reduces conduction losses, improving overall conversion efficiency.
- Photovoltaic Inverters / Energy Storage Systems – Withstands DC bus high voltage, combined with low RDS(on) for highly reliable power conversion.
- Charging Stations / On-Board Chargers – 650V withstand voltage and 20A current capability perfectly match auxiliary power and DC-DC stages.
- Industrial Motor Drives – Acts as a power switch in high-voltage bus-fed variable frequency drives, with superior surge immunity.
- UPS Uninterruptible Power Supplies – Fast switching and low-loss characteristics ensure continuous power supply stability and thermal safety.
- Electric Vehicle High-Voltage Auxiliary Equipment – Withstands battery pack voltage fluctuations, providing reliable power conversion for controllers, instruments, etc.
**One-Sentence Summary:** SIHB240N65E-GE3-VB is not an ordinary MOS tube; it is your "superjunction engine" and "efficiency cornerstone" for high-voltage, high-current power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
