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SSN1N45BBU-VB Product details
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Still troubled by insufficient voltage resistance and difficult heat dissipation in high-voltage control? Let VBsemi SSN1N45BBU-VB help! This TO92-packaged N-MOSFET, with its compact through-hole design, carries a 650V high voltage resistance and 1A current capability, easily handling high-voltage low-power applications. The Planar process ensures stable and reliable switching characteristics. Although the 6667mΩ on-resistance does not pursue extreme dissipation, it excels in scenarios such as high-voltage switching and auxiliary power supplies, making it a trustworthy high-voltage simplified solution for engineers.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 650V | 2V | 1A | 6667(mΩ) | Planar |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | Planar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 650V | 2V | 1A | Planar |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO92 | Single-N | 650V | 2V | 1A | Planar |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO92 | Single-N |
Drain-Source Voltage (VDS): 650V (Sufficient safety margin for high voltage systems)
Gate-Source Voltage (VGS): ±20V (Compatible with 10V~15V typical gate drive)
Threshold Voltage (Vth): 2V (Standard logic level controllable, design-friendly)
On-Resistance: 6667mΩ @ 10V (High voltage device, characteristics match low current applications)
Drain Current (ID): 1A (Satisfies high voltage, low power load requirements)
Package: TO92 (Through-hole, convenient for hand soldering and prototyping)
Technology: Planar (Mature process, excellent consistency and reliability)
Gate-Source Voltage (VGS): ±20V (Compatible with 10V~15V typical gate drive)
Threshold Voltage (Vth): 2V (Standard logic level controllable, design-friendly)
On-Resistance: 6667mΩ @ 10V (High voltage device, characteristics match low current applications)
Drain Current (ID): 1A (Satisfies high voltage, low power load requirements)
Package: TO92 (Through-hole, convenient for hand soldering and prototyping)
Technology: Planar (Mature process, excellent consistency and reliability)
Domain and module applications：
— Four Typical Scenarios, One Solution
Switching Power Supply Auxiliary Power: High-voltage startup, standby power supply, stable and reliable
Small Adapters and Chargers: High-side switching, simplifies startup circuit design
Home Appliance Control Board: AC-DC high-voltage step-down, low-power auxiliary power supply
Industrial Control and Instrumentation: High-voltage signal sampling, isolated power supply drive, safe and durable
SSN1N45BBU-VB — High voltage, low current, stable and reliable, making your power supply design worry-free!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
