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SIA421DJ-T4-GE3-VB Product details

Product introduction:

SIA421DJ-T4-GE3-VB is a Single P-MOS deeply optimized for low-voltage power switch scenarios. Trench technology balances low switching loss and high reliability, while the DFN6(2X2) package balances heat dissipation and board area. The combination of -30V withstand voltage, -10A current-carrying capacity, and 17mΩ on-resistance makes it an ideal cost-reducing incremental option to replace traditional SOP-8 or SOT-23 packaged devices, especially suitable for high-density, high-volume applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN6(2X2) Single-P -30V -1.7V -10A 20(mΩ) 17(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN6(2X2) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN6(2X2) Single-P -30V -1.7V -10A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN6(2X2) Single-P -30V -1.7V -10A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN6(2X2) Single-P

VDS=-30V: Suitable for P-channel applications such as load switches and reverse polarity protection in 5V/12V/24V systems, providing sufficient margin for negative voltage spikes and reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly drive from MCU/PMIC for low-side switching, eliminating the need for level shifters.
Vth=-1.7V (Typical): Allows full conduction region even at low gate drive voltages, especially suitable for P-channel switching control in battery voltage decay scenarios.
RDS(on)=17mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, minimizing required copper area for heat dissipation; RDS(on)=20mΩ at 4.5V drive ensures high efficiency even with low-voltage logic drive.
ID=-10A: Ample continuous current margin to handle peak demands of most portable and automotive auxiliary loads.
Package DFN6(2X2): Small footprint, low parasitic parameters, supports high-frequency switching while saving PCB area and assembly cost.

Domain and module applications:


Portable Device Power Management: Low on-resistance improves power path efficiency, extends battery life, and small package enables ultra-thin designs.
Battery Protection Module: Fast response ensures microsecond shutdown during overcurrent/short circuit, low on-resistance reduces self-heating of the protection board.
Load Switch/Power Path Management: P-channel facilitates high-side switch design, logic-level direct drive simplifies peripherals, suitable for high-volume, low-cost products like smart sockets and USB switches.
Low-Voltage Motor Drive: Low PWM switching losses enable smoother motor operation and significantly lower controller temperature rise.
LED Lighting Driver: Low on-state voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall light efficiency.
DC-DC Converter: Replaces traditional P-channel packaged devices in synchronous rectification or load switches, improving heavy-load efficiency by 2~3%, facilitating module miniaturization.
Automotive Auxiliary Power Supply: Negative voltage margin and wide operating range adapt to 12V automotive bus, high reliability. Selection Summary: SIA421DJ-T4-GE3-VB achieves a balance between performance margin, package size, and system cost, making it a cost-effective general-purpose choice for 30V low-voltage P-channel switching applications, especially suitable for projects with strict space and thermal requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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