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TPN2R805PL,L1Q-VB Product details

Product introduction:

TPN2R805PL,L1Q-VB is a Single N-MOS deeply optimized for low voltage, high power switching scenarios. The Trench technology balances ultra-low on-resistance with fast switching capability, and the DFN8(3X3) package achieves an ideal balance between thermal performance and footprint. The combination of 40V withstand voltage, 60A current capability, and 2mΩ-level on-resistance makes it a high-performance choice for applications such as high-density power modules, battery protection, and motor drives, especially suitable for systems with strict requirements on conduction losses and thermal management.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 40V 3V 60A 3(mΩ) 2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 40V 3V 60A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 40V 3V 60A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

VDS=40V: Suitable for 12V/24V and some 36V systems, providing ample headroom for voltage spikes, improving switching transient reliability.
VGS=±20V: Wide gate voltage range, compatible with 4.5V~12V drive levels, can be flexibly paired with a driver or PMIC output.
Vth=3V (typical): Moderate threshold voltage, enters full conduction region with 4.5V or higher drive voltage, effectively preventing false turn-on.
RDS(on)=2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction losses, notably decreases heat sink copper area and temperature rise.
RDS(on)=3mΩ @ VGS=4.5V: Maintains extremely low on-impedance under low-voltage drive conditions, suitable for 5V logic drive scenarios.
ID=60A: Ample continuous current capability, can handle high-power loads and transient surges, with sufficient margin.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, while optimizing PCB layout density and thermal paths.

Domain and module applications:


DC-DC Converters: Replacing Schottky diodes in synchronous rectification applications; 2mΩ level on-resistance significantly improves heavy-load efficiency, facilitating power module miniaturization.
Battery Protection Modules: Milliohm level internal resistance reduces protection board self-heating; 60A high current capability meets high-power protection needs for energy storage batteries and power tools.
Motor Drive Control: Low conduction losses and fast switching capability improve PWM waveform quality, reduce controller temperature rise, and enhance motor operation smoothness.
Automotive Auxiliary Power Supply: 40V voltage rating adapts to 12V/24V vehicle buses; wide safe operating area ensures reliability under transient conditions like load dump.
High-Density Power Boards: DFN8(3X3) package combined with ultra-low on-resistance is suitable for scenarios with extremely high requirements for power density and efficiency, such as servers and communication equipment.
Power Tools and Industrial Control: High current capacity combined with low heat generation characteristics can handle harsh conditions like stall and overload, extending system life.
LED High Power Drivers: Low conduction voltage drop reduces constant current stage power consumption; supports multi-channel parallel connection, improving overall light efficiency and light output stability. Selection Summary: The TPN2R805PL,L1Q-VB achieves an excellent balance between ultra-low on-resistance, high current capability, and compact packaging. It is a high-performance general-purpose choice for 40V low-voltage high-power switching applications, especially suitable for projects with strict requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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