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IAUZN10S7N078ATMA1-VB Product details

Product introduction:

IAUZN10S7N078ATMA1-VB is a Single N-MOS deeply optimized for medium and high voltage power switching scenarios. Trench technology balances low conduction loss and high switching speed, while the DFN8(3X3) package achieves a good balance between heat dissipation performance and board space. The combination of 100V withstand voltage, 50A current carrying capacity, and 10mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or TO-252 packages in industrial power supplies, motor drives, and automotive systems, especially suitable for high power density and high reliability applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 100V 2.5V 50A 10(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 100V 2.5V 50A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 100V 2.5V 50A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N

VDS=100V: Suitable for 24V/36V/48V/60V systems, providing ample voltage spike margin, significantly reducing avalanche breakdown risk, and enhancing system robustness.
VGS=±20V: Compatible with 5V~12V logic level drive, can directly connect to MCU/PMIC or gate driver IC, simplifying peripheral drive circuit design.
Vth=2.5V (typical): Moderate threshold voltage ensures reliable turn-on with low-voltage logic while effectively suppressing dv/dt-induced false turn-on, suitable for bridge circuit applications.
RDS(on)=10mΩ @ VGS=10V: Ultra-low on-resistance minimizes conduction loss at full load, significantly reducing device temperature rise and decreasing heatsink area or copper foil requirements.
ID=50A: Ample continuous current margin to handle start-up surges and peak current impacts of high-power loads.
Package DFN8(3X3): Small size, low parasitic inductance, supports high-frequency switching, and optimizes thermal path, improving PCB space utilization and power density.

Domain and module applications:


Industrial Power Supplies & DC-DC Converters: Ultra-low on-resistance improves synchronous rectification efficiency, 100V withstand voltage covers mainstream bus voltages, suitable for high power density module design.
Motor Drives & Automated Guided Vehicles: Low PWM switching losses, strong high current carrying capacity, significantly reduced controller temperature rise, improving system stability.
Battery Protection & Energy Storage Systems: Milliohm-level internal resistance reduces protection board self-heating, fast switching characteristics ensure reliable shutdown during overcurrent/short circuit, suitable for large capacity lithium battery packs.
Vehicle Auxiliary Power Supplies & DC-AC Inverters: Wide voltage margin and low on-resistance meet 12V/24V vehicle bus and 48V mild hybrid system requirements, high reliability.
Power Tools & Garden Machinery: High current density combined with a small package facilitates compact design while ensuring long-term heavy load output capability.
LED High-Power Lighting Drivers: Low on-state voltage drop reduces constant current source power loss, improving overall lamp efficiency, supporting multi-channel parallel power expansion.
Communication Base Station & Server Power Supplies: High-frequency, high-efficiency characteristics align with Titanium power supply standards, DFN8 package aids module miniaturization and thermal optimization. Selection Summary: IAUZN10S7N078ATMA1-VB achieves an excellent balance between voltage rating, on-resistance, current capability, and package size, making it a high-performance general-purpose choice for 100V medium-to-high voltage switching applications, especially suitable for projects with strict requirements on power density, thermal efficiency, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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