Product introduction：
SIHH075N65E-T1-GE3-VB is a high-voltage, high-current N-channel power MOSFET in a compact DFN8X8 package, with 650V withstand voltage and 20A current carrying capacity. Based on SJ_Multi-EPI super-junction technology, it features an on-resistance as low as 160mΩ (10V drive), low switching loss, and low heat generation, making it suitable for efficient power conversion applications. The gate drive range is wide up to ±30V, compatible with various drive circuits, offering more flexible system design.
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Domain and module applications：
Switching Power Supplies → High voltage, high frequency, significant efficiency improvement
PFC Power Factor Correction → Low loss, aids high power density design
Electric Vehicle Chargers → High voltage, high current, stable and reliable
Photovoltaic Inverters → High voltage tolerance, strong surge immunity
Industrial Auxiliary Power Supplies → Wide temperature operation, adapts to harsh environments
Server Power Supplies → Synchronous rectification, low heat generation, reduced thermal stress
Motor Drive Control → High-speed switching, responsive, smooth operation
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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