Product introduction：
XPH3R114MC,L1XHQ-VB is a Single P-MOS optimized for low-voltage high-power switching scenarios. The Trench process balances extremely low conduction loss and high reliability, and the DFN8(5X6) package achieves an ideal balance between heat dissipation and board space. The combination of 40V withstand voltage, -150A current capacity, and 3mΩ on-resistance makes it a preferred option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current, high-heat-dissipation applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
|
3(mΩ) |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-P |
-40V |
|
-2V |
-150A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-P |
|
|
|
|
|
|
|
VDS=-40V: Suitable for 12V/24V/36V systems, providing sufficient negative voltage spike margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with wide-range drive logic, can directly connect to controller or driver IC, simplifying gate drive circuit design.
Vth=-2V (Typical): Allows full conduction at lower gate-source voltages, suitable for battery voltage decay scenarios.
RDS(on)=3mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction loss, effectively suppresses temperature rise, reducing heat dissipation design pressure.
ID=-150A: Ample continuous current margin to handle transient peak demands of high-power loads, suitable for high surge current applications.
Package DFN8(5X6): Low parasitic parameters, excellent thermal resistance, supports high-density mounting and high-current routing, enhancing system power density.
Domain and module applications：
High-Power Load Switch: P-MOS high-side drive eliminates the need for a charge pump, low internal resistance supports high-current on/off, suitable for power management in battery-powered systems.
Battery Protection Module: Ultra-low conduction voltage drop reduces self-heating of the protection board, fast shutdown capability ensures reliable protection during overcurrent/short circuit.
Motor Drive Control: -150A high current capability combined with low conduction loss, suitable for high-power motor drives in power tools, drones, etc.
DC-DC Converter: Replaces Schottky diodes in synchronous rectification, low voltage drop and high efficiency, beneficial for power module miniaturization and high power density design.
Automotive Electronic System: 40V voltage margin adapts to 12V/24V automotive bus, supports high-current loads like start-stop systems and light driving.
Power Tools and Garden Machinery: High surge current capability matches the starting characteristics of brushed/brushless motors, improving system durability.
Power Distribution Unit (PDU): Provides a low-loss switching path for high-current buses, reducing system voltage drop and improving overall energy efficiency. Selection Summary: XPH3R114MC,L1XHQ-VB achieves an excellent balance between on-resistance, current capability, and package thermal performance, making it a performance-priority choice for 40V low-voltage high-power P-MOS applications, especially suitable for projects with stringent requirements on efficiency, temperature rise, and space.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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