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NVMFS5C670NLWFET1G-VB Product details

Product introduction:

NVMFS5C670NLWFET1G-VB is a Single N-MOSFET deeply optimized for medium-voltage power switching scenarios. The Trench process balances low switching losses and high reliability, and the DFN8(5X6) package achieves an excellent balance between thermal performance and board space. The combination of 60V withstand voltage, 80A current carrying capacity, and 6mΩ on-resistance makes it an ideal upgrade option to replace traditional DPAK or SOP-8 packaged devices, especially suitable for high-density, high-current applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 60V 2.5V 80A 7(mΩ) 6(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 60V 2.5V 80A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 60V 2.5V 80A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N

VDS=60V: Suitable for 12V/24V/48V systems, providing ample spike voltage margin to reduce avalanche breakdown risk.
VGS=±20V: Compatible with a wide range of logic levels, can be directly connected to MCU/PMIC, eliminating level-shifting circuits.
Vth=2.5V (Typical): Gate drive friendly, balancing noise immunity and low-voltage conduction performance.
RDS(on)=6mΩ @ VGS=10V: Ultra-low on-resistance significantly reduces full-load temperature rise, minimizing copper area for heat dissipation.
RDS(on)=7mΩ @ VGS=4.5V: Maintains very low conduction losses even under low-voltage drive, suitable for 5V drive systems.
ID=80A: Ample continuous current margin to handle peak demands of high-power loads.
Package DFN8(5X6): Low parasitic inductance, excellent thermal characteristics, supports high-frequency switching while saving PCB area and increasing power density.

Domain and module applications:



Server/communication power supplies: Ultra-low on-resistance improves DC-DC conversion efficiency, large package has strong heat dissipation capability, suitable for high-voltage high-current buses.

Power tools and garden machinery: 80A high current carrying capacity combined with low heat generation ensures stable operation under long-term high load.

Battery protection and BMS: Milliohm-level on-resistance significantly reduces protection board self-consumption, fast switching response characteristics ensure overcurrent/short circuit safety.

Motor drive control: Possesses both low conduction loss and low switching loss, smoother PWM speed regulation, significantly reduced controller temperature rise.

Automotive auxiliary power supplies: 60V withstand voltage margin covers 12V/24V vehicle electrical systems, wide operating temperature range improves reliability in harsh environments.

Synchronous rectification circuits: Replacing Schottky diodes, heavy-load efficiency can be improved by 2~3%, facilitating module miniaturization and simplified thermal design.

High-power LED drivers: Low voltage drop reduces constant current source power consumption, supports multi-channel parallel connection, improving overall lamp efficiency and lifespan. Selection Summary: The NVMFS5C670NLWFET1G-VB achieves an excellent balance between high current capability, low on-resistance, and package thermal performance. It is a high-performance general-purpose choice for 60V medium-voltage power switching applications, especially suitable for projects with strict requirements on power density, temperature rise control, and system efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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