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NVMFS4C303NET1G-VB Product details

Product introduction:

NVMFS4C303NET1G-VB is a Single N-MOS deeply optimized for low-voltage, high-current power switching scenarios. The Trench process combines ultra-low conduction losses with fast switching characteristics. The DFN8(5X6) package achieves an ideal balance between thermal performance and board space. The combination of 30V withstand voltage, 128A current capability, and 1.2mΩ on-resistance makes it a preferred device for applications such as high power density power supplies, motor drives, and battery protection, especially suitable for systems with strict requirements on temperature rise and efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 30V 1.7V 128A 1.8(mΩ) 1.2(mΩ) Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 30V 1.7V 128A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 30V 1.7V 128A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N

VDS=30V: Suitable for 5V/12V/24V systems, providing sufficient voltage margin for spikes, reducing avalanche breakdown risk.
VGS=±20V: Compatible with 1.8V~12V logic levels, can directly connect to MCU/PMIC, eliminating level-shifting circuits.
Vth=1.7V (Typical): Can enter the fully enhanced region even with low-voltage drive, especially suitable for battery voltage decay scenarios.
RDS(on)=1.2mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces temperature rise under full load, allowing for smaller copper areas; maintains excellent conduction performance with 1.8mΩ at 4.5V drive.
ID=128A: Ample continuous current margin to handle high-power loads and high surge current scenarios.
Package DFN8(5X6): Low parasitic parameters, low thermal resistance, supports high-frequency switching, saves PCB area, and enhances power density.

Domain and module applications:


High-Power DC-DC Converters: Replaces Schottky diodes in synchronous rectification; ultra-low on-resistance significantly improves heavy-load efficiency, facilitating module miniaturization.
Battery Protection Modules: Fast response ensures microsecond-level shutdown during overcurrent/short-circuit; low internal resistance reduces protection board self-heating, suitable for high-rate battery packs.
Low-Voltage Motor Drives: Low PWM switching losses ensure smoother motor operation, significantly reduces controller temperature rise, suitable for power tools, fans, etc.
Automotive Auxiliary Power Supplies: Voltage margin and wide operating temperature range adapt to 12V/24V automotive buses, offering high reliability for body control and domain controller power supplies.
Server/Communication Power Supplies: High current carrying capacity and low thermal resistance package meet high power density board design requirements, improving overall system energy efficiency.
LED Lighting Drivers: Low on-state voltage drop reduces constant current source power loss, supports multi-channel parallel connection, and improves overall light efficiency.
Power Tools and Portable Devices: 128A peak current capability confidently handles transient conditions like stalling and startup, extending tool lifespan. Selection Summary: The NVMFS4C303NET1G-VB achieves an excellent balance between ultra-low on-resistance, high current capability, and compact packaging, making it a high-performance general-purpose choice for 30V low-voltage, high-current switching applications, particularly suitable for projects with stringent requirements on efficiency, temperature rise, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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