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TK39J60W5,S1VQ-VB Product details

Product introduction:

TK39J60W5,S1VQ-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, using SJ_Multi-EPI superjunction multi-epitaxial process to achieve extremely low on-resistance and switching loss at a 600V withstand voltage level. The TO3P package offers excellent heat dissipation capability and current carrying capacity. The powerful combination of 60mΩ on-resistance and 47A continuous current makes it a preferred device for medium to high-power applications such as high-voltage power supplies, inverters, and industrial drives, effectively replacing traditional planar structure MOSFETs to improve system efficiency and power density.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 47A 60(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 47A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N

VDS=600V: Covers high-voltage scenarios like three-phase rectification, industrial bus, and photovoltaics, suitable for wide input range, with ample voltage margin.
VGS=±30V: Wide gate drive window, compatible with various driver ICs and PWM controllers, simplifying gate protection circuit design.
Vth=3.5V (Typical): Moderate threshold voltage, strong noise immunity, ensures full saturation conduction under 10V drive.
RDS(on)=60mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction losses, reducing heatsink size or lowering temperature rise.
ID=47A: Strong continuous current capability, can handle startup and transient surges of high-power loads, with ample margin.
Package TO3P: Large metal backplate heat dissipation area, low thermal resistance, suitable for prolonged high-power operation, easy for mounting and parallel current sharing.
Technology SJ_Multi-EPI: Superjunction structure optimizes internal electric field, combining low on-resistance with fast switching characteristics, improving system efficiency.

Domain and module applications:


High Voltage Switching Power Supply: The combination of 600V withstand voltage and low RDS(on) effectively improves the efficiency of flyback/forward topologies, reducing the temperature rise of the primary side switch.
Photovoltaic Inverter: Excellent avalanche ruggedness and low loss characteristics, suitable for DC bus boost and H-bridge inverter stages, increasing power generation revenue.
Industrial Motor Drive: 47A current carrying capacity covers small to medium power three-phase motors, low PWM switching loss, higher driver reliability.
UPS Uninterruptible Power Supply: Acts as a high-frequency switch in the rectifier/inverter stage, low conduction voltage drop reduces energy loss, extending backup time.
Electric Vehicle Auxiliary System: Scenarios such as high-voltage bus pre-charge, DC-DC conversion, and air conditioning compressor drive, with sufficient voltage and current margins.
High Power LED Lighting Driver: Used in high-voltage constant current circuits, low switching stress, combined with low conduction loss for high overall luminaire efficacy.
Welding Machine and Cutting Power Supply: Used as the main high-frequency inverter switch, the superjunction technology's low gate charge and fast recovery capability improve welding stability. Selection Summary: The TK39J60W5,S1VQ-VB achieves an excellent balance between high withstand voltage, low on-resistance, and high current capability. With its superjunction multi-epitaxial technology and TO3P package, it becomes a cost-effective general-purpose choice for 600V class medium to high power switching applications, especially suitable for industrial and energy projects with strict requirements for efficiency, heat dissipation, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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