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TK20J50D(F)-VB Product details
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VBsemi TK20J50D(F)-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using superjunction multi-epitaxial (SJ_Multi-EPI) technology, with a drain-source voltage (VDS) of 600V and a maximum drain current (ID) of 20A, capable of meeting the needs of high-voltage, high-current application scenarios. The device is packaged in TO3P, offering good heat dissipation performance and mechanical strength, suitable for high-reliability power electronic systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 190mΩ
Maximum Drain Current (ID): 20A
Package Type: TO3P
Technology Type: SJ_Multi-EPI
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 190mΩ
Maximum Drain Current (ID): 20A
Package Type: TO3P
Technology Type: SJ_Multi-EPI
Domain and module applications：
1. Switching Power Supply: The TK20J50D(F)-VB is suitable for high-efficiency switching power supply circuits, serving as the main switch for AC-DC converters, DC-DC converters, and other modules, improving system efficiency with its low on-resistance and high voltage withstand capability.
2. UPS Uninterruptible Power Supply: This device can be used in the UPS inverter stage and Power Factor Correction (PFC) circuit, supporting high-voltage bus operation to ensure stable and reliable power system operation.
3. Photovoltaic Inverter: In solar photovoltaic power generation systems, the TK20J50D(F)-VB can serve as a switching element in the DC-AC inverter bridge, suitable for high-voltage DC input scenarios, achieving efficient power conversion.
4. Motor Drive Control: Suitable for high-voltage motor drive modules such as industrial variable frequency drives, pump controllers, and fan drive circuits, capable of reliably controlling motor start/stop and speed regulation.
5. Electric Vehicle Charging Infrastructure: In electric vehicle charging stations and on-board chargers, this MOSFET can be used in high-voltage power conversion circuits, improving charging efficiency and system safety.
6. Industrial Power Electronics Equipment: Including welding equipment, induction heating power supplies, high-voltage DC power supplies, etc., the TK20J50D(F)-VB, with its high voltage and high current characteristics, can adapt to harsh industrial environments.
7. High Voltage Auxiliary Power Supply System: Can be used in various high-voltage auxiliary power supplies, smart grid equipment, and switching control circuits in high-voltage distribution systems, providing a stable power switching solution.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
