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H5N6001P-E-VB Product details
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VBsemi H5N6001P-E-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product is manufactured using SJ_Multi-EPI superjunction process, with a drain-source voltage (VDS) of 600V and a continuous drain current capability of 20A, suitable for high-voltage, high-power power conversion and control applications. The device adopts a TO3P package, providing good heat dissipation performance and mechanical strength, suitable for industrial-grade application scenarios requiring high reliability and high current carrying capacity.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | 190(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO3P | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO3P | Single-N |
- Drain-Source Voltage (VDS): 600V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 190 mΩ
- Maximum Drain Current (ID): 20A
- Package Type: TO3P
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxy Process)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 190 mΩ
- Maximum Drain Current (ID): 20A
- Package Type: TO3P
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxy Process)
Domain and module applications：
1. Switching Mode Power Supply (SMPS): The H5N6001P-E-VB is suitable for the primary side switching circuit of high-voltage AC-DC switching power supplies, such as server power supplies, communication power supplies, and industrial power supplies, effectively reducing switching losses and improving system efficiency.
2. Power Factor Correction (PFC) Circuit: In Boost-type PFC topologies, this device can serve as the main switch, utilizing its 600V withstand voltage and low on-resistance to achieve high power factor and low harmonic current, suitable for high-power power supply equipment.
3. High Voltage DC-DC Converter: This model can be used in DC-DC conversion circuits for photovoltaic inverters, charging stations, and high-voltage battery management systems, achieving efficient and stable voltage conversion.
4. Motor Drive and Inverter: In industrial motor drives, variable frequency drives, and UPS uninterruptible power supplies, the H5N6001P-E-VB can serve as a switching device in the inverter bridge arm, meeting high-voltage, high-current drive requirements.
5. Electric Vehicle Charging and On-Board Power Supply: Suitable for electric vehicle on-board chargers (OBC) and DC-DC auxiliary power modules, capable of reliable operation under high voltage and high temperature environments.
6. Industrial Control and Power Electronics Equipment: In fields requiring high-voltage switching devices such as welding machines, induction heating, and elevator control systems, this product provides stable performance and long lifespan. With its 600V high voltage withstand capability, 190mΩ low on-resistance, 20A high current carrying capacity, and low loss characteristics of superjunction multi-epitaxial technology, this product is a preferred MOSFET solution for high-voltage, high-power applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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