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FQA18N50V2-VB Product details

Product introduction:

FQA18N50V2-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios, using SJ_Multi-EPI (superjunction multi-epitaxial) process to achieve an excellent balance of low on-resistance and low switching loss at a 600V withstand voltage level. The TO3P package offers excellent heat dissipation capability and high power density, suitable for applications with strict requirements for high current and high reliability, such as industrial power supplies, inverters, and high-voltage auxiliary circuits. The combination of 20A current carrying capacity and 190mΩ on-resistance makes it a cost-effective upgrade option to replace traditional high-voltage planar MOSFETs.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO3P Single-N 600V 3.5V 20A 190(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO3P Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO3P Single-N 600V 3.5V 20A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO3P Single-N

VDS=600V: Suitable for 380V/480V industrial bus and three-phase rectifier systems, providing ample voltage margin for spikes and significantly enhancing system avalanche ruggedness.
VGS=±30V: Wide gate drive voltage range, compatible with common PWM controllers and driver ICs, reducing risk of gate overvoltage breakdown.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, ensuring full saturation conduction under 10V~15V drive.
RDS(on)=190mΩ @ VGS=10V: Low on-resistance achieved through superjunction technology, significantly reducing full-load losses and improving thermal characteristics.
ID=20A: Ample continuous current margin to handle short-term overloads like motor startup and capacitor charging.
Package TO3P: Metal backplate provides a short heat dissipation path and low thermal resistance, suitable for high-power PCB layouts, supporting high-reliability, long-life design.
Technology SJ_Multi-EPI: Multi-layer epitaxial superjunction structure optimizes internal electric field distribution, combining low on-resistance with fast switching capability.

Domain and module applications:


Switching Mode Power Supply (SMPS): Low loss characteristics under high voltage improve main switch stage efficiency, suitable for 2kW~4kW LLC or flyback topologies.
UPS Uninterruptible Power Supply: High voltage margin in the inverter stage ensures stable operation during battery voltage fluctuations, and the low thermal resistance package facilitates heat dissipation in compact chassis.
Photovoltaic Inverter: In DC-DC boost and bridge inverter circuits, low conduction loss improves overall power generation efficiency and reduces auxiliary cooling costs.
Motor Driver: 600V withstand voltage covers three-phase variable frequency drive requirements, and 20A current capability adapts to industrial motor control modules.
High Voltage DC-DC Converter: Used in communication power supplies, charging station auxiliary power, etc., superjunction technology reduces switching ringing and improves reliability.
Welding Equipment and Induction Heating: Low loss under high-frequency switching, TO3P package withstands high-power cycling, suitable for harsh industrial environments.
On-Board Charger (OBC): Wide voltage range adapts to 400V battery systems, multi-epitaxial process enhances surge immunity. Selection Summary: The FQA18N50V2-VB achieves a balance between high voltage withstand, on-resistance, continuous current, and package thermal performance, making it a cost-effective general-purpose choice for 600V high-voltage switching applications, especially suitable for industrial-grade projects with strict requirements for power density, reliability, and heat dissipation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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