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R8011KNZ4C13-VB Product details
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VBsemi R8011KNZ4C13-VB is a Single N-channel field-effect transistor belonging to VBsemi's high-performance power MOSFET series. This product is manufactured using SJ_Multi-EPI (superjunction multi-epitaxial) technology, featuring high withstand voltage, low conduction losses, and excellent switching characteristics, suitable for various high-voltage power conversion and control applications. The product is packaged in TO247, offering good thermal performance, meeting the requirements of industrial-grade high-reliability applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | 500(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 800V | 3.5V | 11A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Drain-Source Voltage (VDS): 800V
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 500mΩ
- Max Drain Current (ID): 11A
- Package: TO247
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
- Gate-Source Voltage (VGS): ±30V
- Threshold Voltage (Vth): 3.5V
- On-Resistance (VGS=10V): 500mΩ
- Max Drain Current (ID): 11A
- Package: TO247
- Technology Type: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Domain and module applications：
1. High-Voltage Switching Power Supply: The R8011KNZ4C13-VB is suitable for high-voltage switching circuits in AC-DC switching power supplies, server power supplies, and communication power supplies, effectively improving conversion efficiency and reducing losses.
2. Photovoltaic Inverter: In photovoltaic power generation systems, this device can be used as a power switch in the DC-AC inverter module, supporting high-voltage bus applications and ensuring stable and efficient system operation.
3. Industrial Motor Drive: Suitable for industrial inverters, servo drives, and high-power motor control modules, capable of withstanding high-voltage conditions and providing reliable current control capability.
4. Electric Vehicle Charging Pile: In the power conversion unit of electric vehicle charging piles, this MOSFET can serve as a high-voltage rectifier and switching device, meeting high-voltage and high-reliability requirements.
5. Uninterruptible Power Supply (UPS): Used in UPS inverters and Power Factor Correction (PFC) circuits, helping achieve efficient power conversion and stable output.
6. High-Voltage Battery Management System: In energy storage systems and battery pack management modules, it can be used for high-side charge/discharge control, enhancing system safety and service life.
7. Power Electronic Transformer and High-Voltage Auxiliary Power Supply: Suitable for high-voltage auxiliary power systems in rail transit, smart grids, etc., providing high-efficiency, high-voltage power switching solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
