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SIHG026N65E-GE3-VB Product details
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Still struggling with high switching losses and heat dissipation in high-voltage, high-power applications? Let VBsemi SIHG026N65E-GE3-VB solve your worries! This TO247-packaged N-MOSFET, using SJ_Multi-EPI superjunction technology, easily handles 600V withstand voltage for industrial and new energy scenarios, with an on-resistance of only 24mΩ, significantly reducing heat generation compared to similar devices. The 90A high-current capability combined with low gate charge ensures fast switching speed and low losses, making it the "power core" for efficient power conversion and motor drive applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | 24(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 90A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 600V (Sufficient margin for high-voltage applications, safe and reliable)
Drive Range: ±30V (Compatible with various gate drive schemes, flexible adaptation)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 24mΩ @ 10V (Extremely low conduction loss, significantly improved efficiency)
High Current Capability: 90A (High power output from a single device, simplifies parallel design)
Package: TO247 (Excellent heat dissipation, suitable for high power density mounting)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial, balancing low on-resistance and high breakdown voltage)
Drive Range: ±30V (Compatible with various gate drive schemes, flexible adaptation)
Threshold Voltage: 3.5V (Standard level drive, easy to control)
Ultra-Low On-Resistance: 24mΩ @ 10V (Extremely low conduction loss, significantly improved efficiency)
High Current Capability: 90A (High power output from a single device, simplifies parallel design)
Package: TO247 (Excellent heat dissipation, suitable for high power density mounting)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial, balancing low on-resistance and high breakdown voltage)
Domain and module applications：
– Six Core Scenarios, One Solution
Switching Power Supply: Efficient LLC half-bridge/full-bridge topology, significantly improving conversion efficiency
Charging Pile and On-Board Charger: High-voltage, high-current charging and discharging, stable, reliable, and impact-resistant
Photovoltaic Inverter: MPPT and DC-AC conversion, helping reduce system costs and increase efficiency
Motor Drive: Industrial inverters, servo drives, smooth speed regulation, strong overload capacity
UPS Uninterruptible Power Supply: High-frequency switching, ensuring uninterrupted power for critical loads
High-Voltage DC-DC Converter: Synchronous rectification solution, enhancing module power density and reliability
SIHG026N65E-GE3-VB – High voltage, high current, low resistance, high efficiency, empowering your power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
