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TK024N60Z1,S1F-VB Product details
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VBsemi TK024N60Z1,S1F-VB is a Single N-channel field-effect transistor belonging to the VBsemi brand product series. This product features excellent high-voltage withstand capability and low conduction losses, suitable for various high-power power electronics applications. It is manufactured using SJ_Multi-EPI superjunction technology, with a drain-source voltage (VDS) of 600V and operates at a gate-source voltage (VGS) of ±30V. The product is packaged in TO247, suitable for industrial-grade applications requiring high current-carrying capacity and efficient heat dissipation.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 87A | 26(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 87A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 87A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 26 mΩ
Max Drain Current (ID): 87A
Technology Type: SJ_Multi-EPI
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V
On-Resistance (VGS=10V): 26 mΩ
Max Drain Current (ID): 87A
Technology Type: SJ_Multi-EPI
Domain and module applications：
1. Switching Power Supply (SMPS): The TK024N60Z1, S1F-VB is suitable for high-efficiency, high-power-density switching power supply circuits such as server power supplies, communication power supplies, and industrial power modules, significantly reducing conduction losses and improving system energy efficiency.
2. Uninterruptible Power Supply (UPS): In UPS inverter and Power Factor Correction (PFC) circuits, this device can serve as a high-voltage switch, providing stable power conversion and reliable overload capability.
3. Photovoltaic Inverter: Suitable for the DC-AC conversion stage of solar photovoltaic inverters, utilizing its 600V withstand voltage and 87A high current capability to achieve efficient power conversion and grid-tied output.
4. Electric Vehicle Charging Pile: In the power conversion module of electric vehicle DC charging piles, this MOSFET can be used in high-voltage DC-DC converters and PFC stages, ensuring high efficiency and reliability of the charging process.
5. Industrial Motor Drive: Used in the inverter bridge circuit of high-voltage industrial motor drives, supporting start/stop control and speed regulation of high-power motors, meeting stringent industrial environment requirements.
6. High-Voltage Battery Management System (BMS): Suitable for charge/discharge control loops in energy storage systems and high-voltage battery packs, acting as a switching device to manage the on/off control of high-voltage, high-current paths.
7. High-Power Audio Amplifier: In the switching power supply or output stage of high-end high-power audio amplifiers, this product can be used for high-voltage power supply modulation, providing ample current margin and dynamic response.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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