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TK62N60W5,S1VF-VB Product details

Product introduction:

TK62N60W5,S1VF-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching applications. It adopts SJ_Multi-EPI superjunction technology, combining low conduction losses with high switching speed. The TO247 package provides excellent heat dissipation and reliable power handling capability. With a 600V withstand voltage, 67A current-carrying capacity, and 34mΩ on-resistance, this device is a preferred choice for high-reliability applications such as server power supplies, photovoltaic inverters, and industrial drives, especially for systems with stringent efficiency and thermal management requirements.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 67A 34(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 67A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 67A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N

VDS=600V: Suitable for 380V three-phase mains and high-voltage DC bus systems, provides ample margin for voltage spikes, significantly reducing avalanche breakdown risk.
VGS=±30V: Large gate drive margin, compatible with various driver outputs, enhances system noise immunity, simplifies drive design.
Vth=3.5V (Typical): Moderate threshold voltage effectively suppresses dv/dt-induced false turn-on, enhances current sharing stability in multi-device parallel configurations.
RDS(on)=34mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces conduction loss under heavy load, allowing smaller heatsinks and increasing system power density.
ID=67A: Strong continuous current capability, can handle high-power pulse loads, suitable for high current density applications.
Package TO247: Fully isolated package, low thermal resistance, easy mounting, supports high current routing and high power dissipation design, wide operating temperature range, high reliability.
Technology SJ_Multi-EPI: Superjunction structure optimizes the trade-off between on-resistance and breakdown voltage, simultaneously reduces switching losses, improves EMI characteristics, suitable for high-frequency hard-switching topologies.

Domain and module applications:


Switching Power Supply (SMPS): Used as the main switch in high-voltage, high-efficiency topologies. Low on-resistance and low switching losses synergistically improve overall efficiency, suitable for 3kW~6kW power modules.
Photovoltaic Inverter: Performs high-frequency chopping in DC-AC conversion. Superjunction technology reduces temperature rise, enhances long-term outdoor operational reliability, and helps improve MPPT efficiency.
UPS Uninterruptible Power Supply: Applied in high-voltage bus switching and inverter stages, with strong transient overvoltage tolerance to ensure stable power supply for critical loads.
Industrial Motor Drive: 600V withstand voltage covers 380V inverter applications. Low conduction loss reduces driver temperature rise, extending capacitor and fan life.
Electric Vehicle Charging Pile: Used in AC-DC and DC-DC power conversion stages. High current capability meets the high power density design requirements of fast charging modules.
Power Electronic Transformer and High-Voltage DC-DC: In resonant or phase-shifted full-bridge topologies, fast switching and low recovery loss characteristics increase frequency, reducing magnetic component size.
Selection Summary: The TK62N60W5, S1VF-VB achieves an excellent balance between high voltage withstand, high current carrying capacity, low on-resistance, and the TO247 heatsink package. It is a high-performance general-purpose choice in the 600V high-voltage power switch field, especially suitable for industrial and energy projects with strict requirements for efficiency, power density, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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