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TK62N60W,S1VF-VB Product details
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Are you troubled by conduction losses and heat dissipation issues in high-voltage, high-current applications? Let VBsemi TK62N60W,S1VF-VB solve your problems! This TO247-packaged N-MOSFET, utilizing advanced multi-epitaxial superjunction (SJ_Multi-EPI) technology, withstands up to 600V, with a continuous drain current of 67A and an on-resistance of only 34mΩ, maintaining extremely low losses in high-power conversion scenarios. The superjunction technology delivers faster switching speeds and superior FOM values, making it the "efficiency champion" for server power supplies, photovoltaic inverters, industrial drives, and other high-voltage systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | 34(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 600V (High-voltage application, ample margin)
Drive Range: ±30V (Compatible with common 12V/15V gate drives)
Threshold Voltage: 3.5V (Standard threshold, strong noise immunity)
Ultra-Low On-Resistance: 34mΩ @ 10V (Extremely low conduction loss under high current)
High Current Capability: 67A (Single device handles high power)
Package: TO247 (Excellent heat dissipation, suitable for high power density design)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial, fast switching, low loss)
Drive Range: ±30V (Compatible with common 12V/15V gate drives)
Threshold Voltage: 3.5V (Standard threshold, strong noise immunity)
Ultra-Low On-Resistance: 34mΩ @ 10V (Extremely low conduction loss under high current)
High Current Capability: 67A (Single device handles high power)
Package: TO247 (Excellent heat dissipation, suitable for high power density design)
Technology: SJ_Multi-EPI (Superjunction multi-epitaxial, fast switching, low loss)
Domain and module applications：
– Six High-Power Scenarios, One Solution
Switching Power Supply: Efficient LLC half-bridge/full-bridge, improving overall efficiency and power density
Photovoltaic Inverter: DC-AC conversion, reducing temperature rise, extending system life
UPS Uninterruptible Power Supply: High withstand voltage, high current, stably supporting sudden loads
Motor Drive: Industrial inverters, servo drives, precise speed regulation, reliable operation
Electric Vehicle Charging Pile: AC-DC power stage, easily handling high voltage and high current
Industrial High-Voltage DC-DC: Modular power supply design, aiding system miniaturization and high reliability
TK62N60W, S1VF-VB – High voltage, high current, low resistance, low loss, empowering your power design!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
