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SIHW040N65E-GE3-VB Product details
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SIHW040N65E-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. It adopts SJ_Multi-EPI superjunction technology, balancing low conduction losses and fast switching characteristics. The TO247 package provides excellent heat dissipation capability and creepage distance. The combination of 600V withstand voltage, 67A continuous current, and 34mΩ on-resistance makes it a reliable choice for medium-to-high-power applications such as high-voltage power supplies, photovoltaic inverters, and industrial drives, especially suitable for systems with stringent requirements for efficiency and thermal stability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | 34(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 67A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=600V: Suitable for three-phase 380V input and high-voltage DC bus systems, leaving sufficient voltage spike margin, enhancing system avalanche capability.
VGS=±30V: Wide gate drive window, compatible with various driver ICs, reduces risk of false turn-on, suitable for industrial drive levels.
Vth=3.5V (Typical): Moderate threshold voltage, strong anti-interference capability, suitable for high-voltage, high-current scenarios, avoids Miller effect false turn-on.
RDS(on)=34mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction loss, beneficial for improving overall efficiency and power density.
ID=67A: Ample continuous current margin, can cover heavy load requirements of medium-to-high power motors, charging pile modules, etc.
Package TO247: Short heat dissipation path for through-hole mounting, low thermal resistance, supports high power dissipation, suitable for long-term high-load operation.
Domain and module applications：
High-Voltage DC-DC Converter: Superjunction structure reduces switching and conduction losses, suitable for high-efficiency topologies like LLC and phase-shifted full bridge.
Photovoltaic Inverter: 600V voltage tolerance combined with low on-resistance improves MPPT efficiency and overall conversion rate, reducing heatsink costs.
Server Power Supply: In high power density designs, low loss characteristics reduce cooling requirements, supporting module solutions above 3kW.
Industrial Motor Drive: 67A current carrying capacity and TO247 package handle frequent overloads, improving drive reliability.
UPS Uninterruptible Power Supply: Low switching loss on high-voltage bus improves inverter efficiency, meeting long-duration backup operation requirements.
Charging Pile Power Module: High voltage tolerance and high current capability match high-voltage fast charging architectures, enhancing module thermal cycle life.
Energy Storage Converter: In bidirectional power conversion, low voltage drop reduces energy loss, improving charge/discharge cycle efficiency.
Selection Summary: SIHW040N65E-GE3-VB achieves an excellent balance between high voltage tolerance, low on-resistance, and thermal dissipation capability, making it a high-performance general-purpose choice for 600V-class medium-to-high-power switching applications, especially suitable for industrial and new energy projects with strict requirements for efficiency, reliability, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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