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APT50M75B2LLPB-VB Product details

Product introduction:

Still struggling with conduction losses and heat dissipation in high-voltage, high-current applications? VBsemi APT50M75B2LLPB-VB is here to help! This TO247-packaged N-MOS transistor, using advanced SJ_Multi-EPI (superjunction multi-epitaxial) technology, has a withstand voltage of up to 600V while achieving an ultra-low on-resistance of 36mΩ, significantly reducing conduction losses compared to ordinary planar devices. The 64A high current capability, combined with a 650V-level system design margin, easily handles high-voltage, high-power scenarios such as industrial power supplies, photovoltaic inverters, and electric vehicle charging, making it a "high-voltage efficiency tool" for power electronics engineers.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 64A 36(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 64A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 64A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N
Voltage Rating: 600V (Sufficient design margin for high-voltage systems, safe and reliable)
Drive Range: ±30V (Compatible with 12V/15V standard drives, strong anti-interference)
Threshold Voltage: 3.5V (Moderate threshold, effectively suppresses dv/dt false triggering)
Ultra-Low On-Resistance: 36mΩ @ 10V (Minimal conduction loss, significantly improves system efficiency)
High Current Capability: 64A (Large TO247 package, excellent heat dissipation)
Package: TO247 (Suitable for high-power PCB mounting, low thermal resistance, high reliability)
Technology: SJ_Multi-EPI (Super Junction structure, better figure of merit, faster switching speed)

Domain and module applications:


– Six High-Voltage Scenarios, One Core Solution
Switching Power Supply: Efficient LLC half-bridge/full-bridge topology, enabling miniaturization of kilowatt-level power supplies
Photovoltaic Inverter: MPPT boost and inverter stage, improved conversion efficiency, significantly reduced heat generation
Electric Vehicle Charging Pile: High-voltage DC-DC module, stable output, strong surge resistance
Energy Storage Converter: Bidirectional charge/discharge control, low loss supporting high current energy dispatch
Industrial Motor Drive: High-voltage VFD/servo drive, low switching loss, more reliable operation
UPS Uninterruptible Power Supply: Online double conversion, sufficient voltage margin, protecting critical load power supply
APT50M75B2LLPB-VB – High voltage, low resistance, easy control of high current, making your power design more efficient and secure!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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