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TK090N65Z,S1F-VB Product details
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TK090N65Z,S1F-VB is a Single N-MOS deeply optimized for high-voltage power switching scenarios. It adopts SJ_Multi-EPI superjunction technology, achieving an excellent balance between on-resistance and switching losses. The TO247 package offers superior heat dissipation and creepage distance, making it suitable for high-power, high-reliability applications. The combination of 600V withstand voltage, 32A current capacity, and 85mΩ on-resistance makes it an ideal choice for high-voltage, high-density scenarios such as server power supplies, photovoltaic inverters, and industrial drives, effectively replacing traditional planar process devices to improve system efficiency and power density.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | 85(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 32A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=600V: Suitable for three-phase rectification, PFC boost, high-voltage DC-DC and other topologies, providing sufficient voltage spike margin, reducing avalanche breakdown risk.
VGS=±30V: Large gate drive margin, compatible with various driver ICs and discrete drive circuits, simplifying gate protection design.
Vth=3.5V (Typical): Moderate threshold voltage, strong immunity to Miller effect interference, suitable for high-voltage bridge circuits, reducing false turn-on risk.
RDS(on)=85mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces full-load conduction loss, beneficial for improving overall system efficiency and power density.
ID=32A: Ample continuous current margin, can handle transient high-current conditions such as motor startup and capacitive load surges.
Package TO247: Short heat dissipation path for through-hole mounting, low thermal resistance, supports continuous high-power operation, and facilitates parallel expansion design.
Domain and module applications：
Switching Power Supply PFC Circuit: Superjunction structure significantly reduces high-voltage conduction losses, improves power factor correction stage efficiency, and reduces heatsink costs.
Photovoltaic Inverter and Energy Storage System: High voltage tolerance and high current capability adapt to string inverter Boost and H-bridge topologies, enabling higher power level designs.
Industrial Motor Drive: Low switching loss and high surge tolerance capability significantly reduce temperature rise in motor controllers, making operation more reliable.
High-Voltage DC-DC Converter: Applicable to both hard-switching and soft-switching topologies, can improve full-load efficiency and enhance module thermal management.
UPS Uninterruptible Power Supply: 600V voltage tolerance accompanied by low on-resistance reduces losses in rectification/inversion stages, extending backup time.
Charging Pile and On-Board Power Supply: Using this device in high-power auxiliary power supplies and DC-DC stages can significantly improve conversion efficiency and long-term reliability.
Selection Summary: TK090N65Z,S1F-VB achieves a balance between high voltage tolerance, on-resistance, package thermal dissipation capability, and system cost, making it a cost-effective general-purpose choice for 600V high-voltage switching applications, especially suitable for industrial production and new energy scenarios with strict requirements for efficiency, heat dissipation, and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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