中文
English
SIHW47N65E-GE3-VB Product details
Back to previous pageProduct introduction：
Still troubled by low efficiency and severe heat generation in high-voltage high-power conversion? Let VBsemi SIHW47N65E-GE3-VB help you! This N-MOSFET in TO247 package, using SJ_Multi-EPI super-junction multi-epitaxial technology, offers a withstand voltage of up to 600V, continuous current capability of 31A, and an on-resistance of only 90mΩ, ensuring low loss and minimal temperature rise in high-power applications. Whether in switching power supplies, photovoltaic inverters, or motor drives, it delivers robust voltage regulation and switching performance, serving as a 'high-voltage weapon' for engineers.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | 90(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 600V (Handles high-voltage systems with ease)
Drive Range: ±30V (Compatible with multiple gate drive schemes)
Threshold Voltage: 3.5V (Standard level reliable triggering)
Ultra-Low On-Resistance: 90mΩ @ 10V (Significantly reduced conduction losses)
High Current Capability: 31A (TO247 package handles high power)
Package: TO247 (Excellent heat dissipation, suitable for industrial applications)
Technology: SJ_Multi-EPI (Super-junction structure, fast switching, low losses)
Drive Range: ±30V (Compatible with multiple gate drive schemes)
Threshold Voltage: 3.5V (Standard level reliable triggering)
Ultra-Low On-Resistance: 90mΩ @ 10V (Significantly reduced conduction losses)
High Current Capability: 31A (TO247 package handles high power)
Package: TO247 (Excellent heat dissipation, suitable for industrial applications)
Technology: SJ_Multi-EPI (Super-junction structure, fast switching, low losses)
Domain and module applications：
– One Solution for Six High-Voltage Scenarios
Switching Power Supplies: Efficient AC-DC main switch, improving overall system efficiency.
Photovoltaic Inverters: Stable DC-AC conversion, supporting new energy power generation.
UPS Uninterruptible Power Supplies: High reliability, ensuring continuous power for critical loads.
Motor Drives: Industrial VFDs, power tools, precise speed control and enhanced durability.
Charging Pile Modules: High voltage, high current conversion with worry-free heat dissipation.
Industrial Auxiliary Power Supplies: Wide voltage input, surge resistant, adaptable to harsh environments. SIHW47N65E-GE3-VB – High voltage, high current, low resistance, high efficiency, making your power supply design easier!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
