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SIHG135N65S-GE3-VB Product details
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SIHG135N65S-GE3-VB is a Single N-MOS deeply optimized for high-voltage power switching applications. Using SJ_Multi-EPI (super-junction multi-epitaxial) technology, it achieves a balance between low on-resistance and high switching speed at a 600V voltage rating. The TO247 package provides excellent heat dissipation and overcurrent capability, making it suitable for high-power, high-reliability industrial applications. The combination of 600V withstand voltage, 31A continuous current, and 90mΩ on-resistance makes it a preferred power device for high-voltage high-frequency switching power supplies, inverters, and new energy systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | 90(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 31A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=600V: Suitable for three-phase 380V input and PFC boosted bus voltage, providing ample spike margin, significantly reducing avalanche breakdown risk.
VGS=±30V: Wide gate voltage withstand window, compatible with common 12V~18V drive levels, improving driver circuit anti-interference capability.
Vth=3.5V: Moderate threshold voltage, effectively suppresses dv/dt-induced false turn-on, enhancing system noise immunity.
RDS(on)=90mΩ @ VGS=10V: Based on super-junction multi-epitaxial process, low on-resistance per unit area, low full-load losses, significantly reduced thermal stress.
ID=31A: Large continuous current margin, suitable for peak load demands of medium-to-high-power switching converters.
Package TO247: Through-hole 3-pin mounting, low thermal resistance, long creepage distance, suitable for high-voltage, high-power scenarios, facilitating layout of large heatsinks.
Domain and module applications：
High Voltage Switching Power Supplies: Combination of low Qg and low RDS(on) improves efficiency, suitable for 300W~3kW class AC-DC main switches.
Photovoltaic Inverters: 600V withstand voltage covers string inverter bus voltage; super junction structure reduces losses, helping improve grid-connected power generation efficiency.
Charging Piles and On-Board Chargers: High withstand voltage, low conduction losses meet wide voltage output requirements, enhancing power stage thermal reliability.
UPS Uninterruptible Power Supplies: Inverter and PFC stages can withstand high surge currents, significantly improving system overload and short-circuit withstand capability.
Motor Drives and Industrial Control: TO247 package offers strong heat dissipation, suitable for three-phase bridge circuits of high voltage VFDs and servo drives.
DC-DC Converters: Can be used as high-efficiency switching tubes in high voltage DC bus step-down scenarios, replacing traditional planar MOSFETs for lower on-state losses.
Power Factor Correction (PFC): Super junction multi-epitaxial process features extremely low reverse recovery charge, working with fast recovery diodes to reduce switching noise and EMI. Selection Summary: The SIHG135N65S-GE3-VB achieves 90mΩ low on-resistance and 31A high current carrying capability on a 600V high voltage platform, combined with the strong heat dissipation advantage of TO247, making it a cost-effective general-purpose choice for high voltage, high power switching applications, particularly suitable for industrial and new energy projects with strict requirements for efficiency, temperature rise, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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