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TK28N65W,S1F-VB Product details

Product introduction:

TK28N65W,S1F-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI superjunction multi-epitaxial technology, it combines low conduction losses with high switching speed. The TO247 package provides excellent heat dissipation and reliable current carrying capability. The combination of 600V withstand voltage, 26A current carrying capacity, and 115mΩ on-resistance makes it a preferred device for high-voltage, high-power applications such as server power supplies, industrial drives, and new energy inverters, especially suitable for system designs with stringent requirements for efficiency and thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 26A 115(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N

VDS=600V: Suitable for scenarios such as three-phase rectification, Boost PFC, and high-voltage bus, provides ample voltage spike margin, enhances system avalanche capability.
VGS=±30V: Large gate drive margin, compatible with various high-voltage driver ICs, reduces risk of false turn-on, improves drive reliability.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, while fully conducting with standard 12V~15V drive voltage.
RDS(on)=115mΩ @ VGS=10V: Ultra-low on-resistance, significantly reduces heavy load conduction loss, can reduce the number of parallel devices and simplify thermal design.
ID=26A: Ample continuous current margin, can handle instantaneous overload conditions such as motor startup and capacitor charging, suitable for medium and high power converters.
Package TO247: Through-hole mounting with short thermal path, low thermal resistance, suitable for high power density design, while meeting industrial reliability requirements.

Domain and module applications:


High-Voltage DC-DC Converters: Low conduction losses improve full-load efficiency; superjunction structure reduces switching losses, aiding module miniaturization.
Server and Telecom Power Supplies: Excellent performance in PFC and LLC topologies, meeting 80Plus Platinum and higher energy efficiency standards.
Industrial VFDs and Servo Drives: Sufficient voltage margin, stable PWM switching performance, can reduce temperature rise in motor drive controllers.
Photovoltaic Inverters and Energy Storage Systems: 600V withstand voltage matches three-phase PV bus bars; low internal resistance reduces energy loss, improving overall system power generation efficiency.
Charging Stations and Onboard High-Voltage Auxiliary Power Supplies: High-reliability packaging and wide Safe Operating Area (SOA) adapt to harsh operating conditions, ensuring long-term full-load operation.
UPS Uninterruptible Power Supplies: Strong overload capability, consistent switching characteristics, suitable for high-frequency, high-power-density next-generation power supply designs. Selection Summary: TK28N65W,S1F-VB achieves an excellent balance between voltage rating, current capability, and conduction losses, making it a cost-effective general-purpose choice for 600V high-voltage switching applications, especially suited for industrial-grade power supplies and power conversion projects with strict requirements for efficiency, temperature rise, and long-term reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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