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TK25N60X5,S1F-VB Product details

Product introduction:

TK25N60X5,S1F-VB is a Single N-MOSFET deeply optimized for high-voltage power switching scenarios. Using SJ_Multi-EPI superjunction technology, it balances low conduction losses with high switching speed. The TO247 package provides excellent heat dissipation and reliable insulation mounting convenience. The combination of 600V withstand voltage, 26A current carrying capacity, and 115mΩ on-resistance makes it a preferred device for medium-to-high power applications such as server power supplies, photovoltaic inverters, and industrial drives, especially suitable for system designs with strict requirements for efficiency and thermal stability.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TO247 Single-N 600V 3.5V 26A 115(mΩ) SJ_Multi-EPI
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TO247 Single-N SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TO247 Single-N 600V 3.5V 26A SJ_Multi-EPI
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TO247 Single-N

VDS=600V: Covers high-voltage bus scenarios such as three-phase rectification, UPS, and photovoltaic boost, provides ample turn-off spike margin, enhances system avalanche capability.
VGS=±30V: Wide gate drive range, compatible with common PWM driver ICs and isolated drive schemes, simplifies gate protection circuit design.
Vth=3.5V (typical): Moderate threshold voltage, strong noise immunity, while ensuring stable and full conduction at drive levels under high voltage and high current.
RDS(on)=115mΩ @ VGS=10V: Super junction structure achieves low on-resistance, significantly reduces full-load conduction loss, improves overall temperature rise and efficiency.
ID=26A: Ample continuous current margin, can drive medium to high power loads, suitable for surge currents from motors, transformers, and inductive loads.
Package TO247: Large creepage distance, low thermal resistance, easy to mount heatsinks, suitable for continuous high power output scenarios.

Domain and module applications:


Switching Power Supplies and Server Power Supplies: Low conduction losses improve AC-DC conversion efficiency; high voltage withstand meets PFC and LLC stage design requirements.
Photovoltaic Inverters and Energy Storage Systems: Superjunction technology reduces boost and inverter losses, improves MPPT efficiency and overall power generation, adapting to high-voltage bus architectures.
Industrial Motor Drives: High voltage withstand and high current capability match three-phase 380V systems; low switching losses simultaneously improve driver reliability and power density.
UPS Uninterruptible Power Supplies: Provide solid power support in battery inverter and mains switching circuits; strong surge immunity ensures power supply to critical loads.
Electric Vehicle Charging Modules: Used as main switching transistors in high-voltage DC-DC conversion; low on-resistance helps achieve high power density charging modules.
High-Frequency Welding and Induction Heating: Fast switching characteristics combined with low losses suit high-frequency resonant conversion topologies, improving equipment output capability and stability.
High-Voltage Adapters and Auxiliary Power Supplies: 600V withstand voltage covers wide input voltage applications; compatible with flyback, active clamp, and other topologies, simplifying thermal design.
Selection Summary: TK25N60X5,S1F-VB achieves an excellent balance between high voltage withstand, low on-resistance, and the heat dissipation capability of the TO247 package. It is a cost-effective general-purpose choice for 600V-level power conversion systems, particularly suitable for industrial-grade applications with strict requirements for efficiency, reliability, and power density.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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