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TK110N65Z,S1F-VB Product details
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Are you designing a high-efficiency, high-power switching power supply or photovoltaic inverter, where losses and heat dissipation on the high-voltage side are always a headache? Ordinary MOSFETs either have high on-resistance or insufficient switching speed, leading to significant system temperature rise. VBsemi TK110N65Z,S1F-VB is designed for this—it is based on advanced multi-epitaxial superjunction (SJ_Multi-EPI) technology, integrating 600V withstand voltage, 26A current carrying capacity, and an on-resistance of only 115mΩ into a robust TO247 package, allowing high-voltage, high-power designs to achieve an ideal balance between efficiency and reliability.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 26A | 115(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 26A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 26A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
- Voltage 600V, covers mainstream high-voltage applications, with ample safety margin
- Gate drive range ±30V, compatible with various drive schemes, strong gate overvoltage capability
- Threshold voltage 3.5V, clear turn-on characteristics, excellent noise immunity
- On-resistance 115mΩ (at 10V drive), maintains extremely low conduction loss even at high voltage
- Max current 26A, TO247 package offers significant heat dissipation advantages, suitable for high-power circuits
- Super Junction Multi-Epitaxy technology, optimizes on-resistance and gate charge, suitable for both low and high frequency applications
Domain and module applications：
- Switching Power Supplies / LLC Resonant Power Supplies – Used as main switching transistors, leveraging superjunction low on-resistance and low loss characteristics to improve overall efficiency and reduce heatsink requirements.
- Photovoltaic Inverters / UPS Uninterruptible Power Supplies – Handle power conversion on the high-voltage DC bus side, withstand voltage spikes, and ensure long-term stable system operation.
- Electric Vehicle Charging Stations / High-Power AC-DC Modules – Lower switching losses during high-frequency switching, helping achieve higher power density.
- PFC Power Factor Correction Circuits – Operate reliably in Continuous Conduction Mode (CCM), effectively reducing conduction losses and improving power quality.
- Industrial Motor Drives / Variable Frequency Drives – With 600V withstand voltage and 26A current capability, suitable for power switches in three-phase inverter bridges.
- Electromagnetic Heating / High-Power Audio Amplifiers – High slew rate and low loss characteristics meet high-frequency power conversion needs, providing ample current margin. In a nutshell: TK110N65Z,S1F-VB is not an ordinary MOS transistor; it is a 'superjunction powerhouse' that balances efficiency, heat dissipation, and reliability in your high-voltage power supply designs.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
