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TK20N60W,S1VF-VB Product details
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Troubled by high heat generation and high losses on the high-voltage side of high-power switching power supplies? VBsemi TK20N60W,S1VF-VB is the solution! This TO247-packaged N-MOSFET, using SJ_Multi-EPI super-junction technology, can stably output 20A of high current at 600V high voltage, with an on-resistance of only 160mΩ, significantly reducing conduction losses. The super-junction structure enables faster switching speeds and lower gate charge, further improving the efficiency of high-voltage converters, making it a 'high-voltage efficiency weapon' for industrial power supplies and new energy applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Voltage Rating: 600V (Handles high-voltage systems with ease, ample margin)
Drive Range: ±30V (Compatible with common 10V/15V gate drives)
Turn-On Threshold: 3.5V (Reliable turn-on at standard levels)
Low On-Resistance: 160mΩ @ 10V (Low conduction losses, minimal heat generation)
High Current Capability: 20A (TO247 package handles robust power)
Package: TO247 (Excellent heat dissipation, suitable for high-power mounting)
Technology: SJ_Multi-EPI Superjunction Process (Fast switching, low losses)
Drive Range: ±30V (Compatible with common 10V/15V gate drives)
Turn-On Threshold: 3.5V (Reliable turn-on at standard levels)
Low On-Resistance: 160mΩ @ 10V (Low conduction losses, minimal heat generation)
High Current Capability: 20A (TO247 package handles robust power)
Package: TO247 (Excellent heat dissipation, suitable for high-power mounting)
Technology: SJ_Multi-EPI Superjunction Process (Fast switching, low losses)
Domain and module applications：
– Six High-Voltage Scenarios, One Solution
Industrial Switching Power Supply: LLC half-bridge/full-bridge topology, high efficiency, low temperature rise
Photovoltaic Inverter: DC-AC conversion, withstands high bus voltage, stable and reliable
UPS Uninterruptible Power Supply: High-frequency switching, ensures critical loads remain powered
Motor Drive: High-voltage variable frequency drive, smooth speed regulation, strong impact resistance
Charging Pile Module: Efficient AC-DC power stage, enabling fast charging
PFC Power Factor Correction: Core switch for Boost circuit, improving power qualityTK20N60W,S1VF-VB – High voltage, high current, low resistance, high efficiency, making your power design more effortless!
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
