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TK125N60Z1,S1F-VB Product details
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VBsemi TK125N60Z1,S1F-VB is a Single N-channel field-effect transistor manufactured using SJ_Multi-EPI (Super Junction Multi-Epitaxial) technology, designed for high-voltage power conversion and industrial-grade power control scenarios. Its TO247 package offers excellent heat dissipation and high reliability, suitable for high-power-density systems. The device provides stable switching characteristics within a 600V drain-source voltage range and features a wide gate drive voltage range of ±30V, accommodating various drive circuit architectures for ease of system integration and design flexibility.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | 160(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 600V | 3.5V | 20A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Drain-Source Voltage (VDS): 600V
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V (Typical)
On-Resistance (VGS=10V): 160mΩ (Typical)
Maximum Drain Current (ID): 20A
Package Type: TO247
Process Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Gate-Source Voltage (VGS): ±30V
Threshold Voltage (Vth): 3.5V (Typical)
On-Resistance (VGS=10V): 160mΩ (Typical)
Maximum Drain Current (ID): 20A
Package Type: TO247
Process Technology: SJ_Multi-EPI (Superjunction Multi-Epitaxial)
Domain and module applications：
1. High-Voltage Switching Power Supply: Used as the main switch tube in AC-DC converters, leveraging low conduction loss and high-voltage characteristics to improve overall efficiency, suitable for high-efficiency scenarios such as server power supplies and industrial adapters.
2. Photovoltaic Inverter: Used as a switching device in the DC-AC boost or inverter stage, adapting to high-voltage bus environments, reducing conduction voltage drop, and improving the power generation utilization rate of the photovoltaic system.
3. Uninterruptible Power Supply (UPS): Undertakes power switching in the rectifier/inverter circuit of online UPS, combined with high voltage withstand capability to ensure stable output during mains abnormalities.
4. Electric Vehicle Charging Module: Used in the power stage circuit of on-board chargers or DC charging piles, capable of withstanding high-voltage bus stress and supporting high-current fast charging requirements.
5. Power Factor Correction (PFC) Circuit: Acts as the main switch in Boost PFC topology, utilizing super-junction structure to achieve low gate charge and fast switching, reducing harmonic pollution.
6. Industrial Motor Drive: Drives high-voltage three-phase asynchronous motors or permanent magnet synchronous motor controllers, suitable for equipment such as frequency converters and servo drives, supporting PWM speed regulation and overload protection.
7. High-Voltage DC-DC Converter: Used for isolated or non-isolated DC conversion in scenarios such as communication base stations and rail transit, providing a stable high-voltage side switching solution and enhancing system reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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