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SIHG050N65SF-GE3-VB Product details
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SIHG050N65SF-GE3-VB is a Single N-MOS deeply optimized for high-voltage, high-power switching applications. It utilizes SJ_Multi-EPI super-junction technology to achieve extremely low on-resistance and excellent switching characteristics at a 650V voltage rating. The TO247 package offers good heat dissipation and current-carrying capacity, making it suitable for high-reliability applications such as industrial power supplies, photovoltaic inverters, and electric vehicle charging stations. The combination of 36mΩ on-resistance and 64A continuous current makes it a high-performance alternative to traditional planar MOSFETs in high-voltage systems, significantly reducing conduction losses and simplifying thermal design.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | 36(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
VDS=650V: Suitable for three-phase industrial grids, 400V systems, and high-voltage DC-DC scenarios, providing ample peak voltage margin and enhanced avalanche ruggedness.
VGS=±30V: Large gate drive margin, compatible with standard 12V/15V drive, strong gate overvoltage capability, improving system reliability.
Vth=3.5V (Typical): Moderate threshold voltage, strong noise immunity, suitable for high-voltage bridge leg drive, preventing false turn-on.
RDS(on)=36mΩ @ VGS=10V: Ultra-low on-resistance, significantly reducing full-load losses, allowing for smaller heatsink size or increased power density.
ID=64A: Ample continuous current margin, capable of handling peak current demands in high-power switching, inverter, and rectifier applications.
Package TO247: Through-hole mounting with short thermal path, low thermal resistance, suitable for high-power dissipation scenarios; high pin strength for industrial-grade assembly.
Technology SJ_Multi-EPI: Superjunction structure optimizes the trade-off between on-resistance and output capacitance, reducing switching losses and improving efficiency in hard-switching topologies.
Domain and module applications：
Industrial Switching Power Supply: Low conduction loss improves full-load efficiency, super-junction technology reduces switching stress, adapting to a wide input voltage range.
Photovoltaic Inverter: 650V voltage withstand combined with low RDS(on) reduces DC-AC conversion losses, increasing power generation revenue.
Electric Vehicle Charging Module: High-voltage and high-current capability meets LLC or phase-shifted full-bridge topologies, helping the module achieve higher power density.
UPS Uninterruptible Power Supply: High-frequency switching characteristics and low loss improve inverter efficiency, while enhancing overload and short-circuit robustness.
High-Voltage DC-DC Converter: Replaces traditional MOSFETs in synchronous rectification or active clamp circuits, significantly reducing temperature rise under heavy load.
Motor Drive and Frequency Converter: Direct drive from high-voltage bus, low conduction loss, improves system temperature rise, and extends device lifespan.
PFC Power Factor Correction: Super-junction technology reduces rise/fall time, suitable for Continuous Conduction Mode (CCM), reducing EMI filter costs. Selection Summary: SIHG050N65SF-GE3-VB achieves an ultra-low on-resistance of 36mΩ and a high current capability of 64A at the 650V voltage rating. Combined with the TO247 package and super-junction process, it provides a solution that balances efficiency and reliability for high-power, high-voltage switching applications, especially suitable for industrial-grade projects with strict requirements on temperature rise, power density, and long-term stability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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