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FCH077N65F-F085-VB Product details
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Product Description
You are designing a high-power server power supply or photovoltaic inverter, where the bus voltage reaches hundreds of volts, and the switching transistor must withstand tens of amperes of continuous current and severe surge impacts. Ordinary high-voltage MOS tubes either have excessive conduction loss or high thermal resistance, making thermal design challenging. VBsemi FCH077N65F-F085-VB is designed for this purpose – it integrates 650V withstand voltage, 64A current carrying capacity, and an on-resistance of only 36mΩ into the robust TO247 package, allowing high-power supply design without compromise.
You are designing a high-power server power supply or photovoltaic inverter, where the bus voltage reaches hundreds of volts, and the switching transistor must withstand tens of amperes of continuous current and severe surge impacts. Ordinary high-voltage MOS tubes either have excessive conduction loss or high thermal resistance, making thermal design challenging. VBsemi FCH077N65F-F085-VB is designed for this purpose – it integrates 650V withstand voltage, 64A current carrying capacity, and an on-resistance of only 36mΩ into the robust TO247 package, allowing high-power supply design without compromise.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | 36(mΩ) | SJ_Multi-EPI |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | SJ_Multi-EPI |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TO247 | Single-N | 650V | 3.5V | 64A | SJ_Multi-EPI |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TO247 | Single-N |
Withstand Voltage 650V, easily handles high-voltage bus fluctuations
Gate Drive Range ±30V, compatible with wide-range drive circuits
Threshold Voltage 3.5V, achieving stable and reliable switching control
On-Resistance 36mΩ (at 10V drive), greatly reduces losses
Maximum Current 64A, drives high-power loads with ease
Utilizes SJ_Multi-EPI Super Junction Multi-Epitaxial Technology, balancing low on-resistance and fast switching
Domain and module applications：
Server/Communication Power Supply – As the main PFC or LLC switching transistor, it effectively reduces conduction losses, improving overall efficiency and power density.
Photovoltaic Inverter – Achieves efficient power conversion on the DC side, withstanding wide voltage fluctuations from PV panels, ensuring long-term stable system operation.
Electric Vehicle Charging Pile – Undertakes high-voltage and high-current switching tasks, and with the low thermal resistance TO247 package, simplifies heat dissipation design.
Industrial Motor Drive – With 650V withstand voltage and 64A high current capability, reliably drives high-power motors, reducing temperature rise.
UPS Uninterruptible Power Supply – Provides solid switching support in the rectifier and inverter stages, ensuring critical loads remain powered.
High-Voltage DC-DC Converter – Replaces traditional MOS transistors in synchronous rectification or hard-switching topologies, improving conversion efficiency by 2~3%.
Energy Storage Converter (PCS) – Adapts to the wide voltage range of the battery side, enabling bidirectional energy transfer, improving system cycle efficiency. One-sentence summary: The FCH077N65F-F085-VB is not an ordinary MOS transistor; it is the "reliable cornerstone" and "efficiency engine" of your high-voltage, high-power power supply design.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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